XB1004-BD
Buffer Amplifier
16.0-30.0 GHz
Rev. V1
Mechanical Drawing
1.290
(0.051)
1.892
(0.074)
1.500
(0.059)
2
3
0.798
(0.031)
0.798
1
4
(0.031)
10
8
6
5
9
7
0.0
0.958
(0.038)
1.359
(0.054)
1.760
(0.069)
0.0
2.330
(0.092)
1.158
1.560
1.958
(0.046)
(0.061)
(0.077)
(Note:Engineering designator is22LN3UA0279)
Units:millimeters(inches)Bond pad dimensionsareshown to center of bond pad.
Thickness:0.110+/- 0.010 (0.0043+/- 0.0004),Backsideisground,Bond Pad/BacksideMetallization:Gold
All Bond Padsare0.100x 0.100 (0.004 x 0.004).
Bond pad centersareapproximately 0.109 (0.004)from theedgeof thechip.
Dicing tolerance:+/- 0.005 (+/- 0.0002).Approximateweight:2.165mg.
Bond Pad #1 (RFIn)
Bond Pad #2 (Vd1)
Bond Pad #3 (Vd2)
Bond Pad #4 (RFOut)
Bond Pad #5 (Vg2c)
Bond Pad #6 (Vg2b)
Bond Pad #7 (Vg2a)
Bond Pad #8 (Vg1c)
Bond Pad #9 (Vg1b)
Bond Pad #10 (Vg1a)
Bias Arrangement
Bypass Capacitors - See App Note [2]
Vd1,2
Vd1,2
2
3
RF Out
4
1
RF In
RF In
XB1004-BD
RF Out
10
9
8
7
6
5
Vg1,2
Vg1c, Vg2c
8
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is considering for development. Performance is based on target specifications, simulated results,
and/or prototype measurements. Commitment to develop is not guaranteed.
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