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XB1005-BD

更新时间: 2024-11-17 03:14:47
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MIMIX 缓冲放大器
页数 文件大小 规格书
12页 737K
描述
35.0-45.0 GHz GaAs MMIC Buffer Amplifier

XB1005-BD 数据手册

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35.0-45.0 GHz GaAs MMIC  
Buffer Amplifier  
March 2007 - Rev 06-Mar-07  
B1005-BD  
Features  
Chip Device Layout  
High Dynamic Range  
Excellent LO Driver/Buffer Amplifier  
Low Noise or Power Bias Configurations  
23.0 dB Small Signal Gain  
2.7 dB Noise Figure at Low Noise Bias  
+16 dBm P1dB Compression at Power Bias  
100% On-Wafer RF, DC and Noise Figure Testing  
100% Visual Inspection to MIL-STD-883  
Method 2010  
General Description  
Mimix Broadband’s three stage 35.0-45.0 GHz GaAs  
MMIC buffer amplifier has a small signal gain of 23.0  
dB with a noise figure of 2.7 dB across the band.This  
MMIC uses Mimix Broadband’s 0.15 µm GaAs PHEMT  
device model technology, and is based upon electron  
beam lithography to ensure high repeatability and  
uniformity.The chip has surface passivation to protect  
and provide a rugged part with backside via holes  
and gold metallization to allow either a conductive  
epoxy or eutectic solder die attach process.This  
device is well suited for Millimeter-wave  
Absolute Maximum Ratings  
Supply Voltage (Vd)  
Supply Current (Id)  
Gate Bias Voltage (Vg)  
Input Power (Pin)  
+6.0 VDC  
180 mA  
+0.3 VDC  
+5 dBm  
Storage Temperature (Tstg) -65 to +165 OC  
Operating Temperature (Ta) -55 to MTTF Table  
5
5
Channel Temperature (Tch) MTTF Table  
(5) Channel temperature affects a device's MTBF. It is  
recommended to keep channel temperature as low as  
possible for maximum life.  
Point-to-Point Radio, SATCOM and VSAT applications.  
Electrical Characteristics (AmbientTemperatureT = 25 oC)  
Parameter  
Units  
GHz  
dB  
dB  
dB  
dB  
dB  
dB  
dBm  
dBm  
dBm  
VDC  
VDC  
mA  
Min.  
35.0  
4.0  
9.0  
20.0  
-
35.0  
-
-
Typ.  
-
8.0  
Max.  
45.0  
-
-
27.0  
-
-
3.5  
-
Frequency Range (f)  
Input Return Loss (S11)  
3
3
Output Return Loss (S22)  
17.0  
23.0  
+/-1.0  
45.0  
2.7  
+16.0  
+26.0  
+18.0  
+3.5  
-0.4  
3
Small Signal Gain (S21)  
Gain Flatness ( S21)  
Reverse Isolation (S12)  
3
4
Noise Figure (NF)  
1,2,3  
Output Power for 1 dB Compression (P1dB)  
Output Third Order Intercept Point (OIP3)  
1,2,3  
-
-
-
1,2,3  
Saturated Output Power (Psat)  
+16.0  
-1.2  
-
Drain Bias Voltage (Vd1,2,3)  
Gate Bias Voltage (Vg1,2,3)  
Supply Current (Id) (Vd=3.5V,Vg=-0.4V Typical)  
+4.5  
+0.1  
154  
50  
(1) Optional low noise bias Vd1,2,3=3.5V, Id=50mA will typically yield 3-4dB decreased P1dB and OIP3.  
(2) Measured using constant current.  
(3) Unless otherwise indicated Min/Max over 35.0-45.0 GHz and biased at Vd=4.5V, Id1=28mA, Id2=42mA, Id3=84mA.  
(4) Unless otherwise indicated Min/Max over 35.0-45.0 GHz and biased at Vd=3.5V, Id1=9mA, Id2=16mA, Id3=25mA.  
Page 1 of 12  
Mimix Broadband, Inc., 10795 Rockley Rd., Houston,Texas 77099  
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com  
Characteristic Data and Specifications are subject to change without notice. ©2007 Mimix Broadband, Inc.  
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept  
their obligation to be compliant with U.S. Export Laws.  

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