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XB1008-BD-000V

更新时间： 2024-10-28 03:14:47
品牌 Logo 应用领域
MIMIX 射频和微波射频放大器微波放大器缓冲放大器
页数 文件大小 规格书
9页 237K
描述
10.0-21.0 GHz GaAs MMIC Buffer Amplifier

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XB1008-BD-000V 技术参数

是否Rohs认证： 符合生命周期：Transferred
Reach Compliance Code：unknown风险等级：5.13
Is Samacsys：N构造：COMPONENT
增益：18 dB最大输入功率 (CW)：20 dBm
JESD-609代码：e4最大工作频率：21000 MHz
最小工作频率：10000 MHz最高工作温度：85 °C
最低工作温度：-55 °C射频/微波设备类型：WIDE BAND MEDIUM POWER
端子面层：Gold (Au)Base Number Matches：1

XB1008-BD-000V 数据手册

 浏览型号XB1008-BD-000V的Datasheet PDF文件第2页浏览型号XB1008-BD-000V的Datasheet PDF文件第3页浏览型号XB1008-BD-000V的Datasheet PDF文件第4页浏览型号XB1008-BD-000V的Datasheet PDF文件第5页浏览型号XB1008-BD-000V的Datasheet PDF文件第6页浏览型号XB1008-BD-000V的Datasheet PDF文件第7页 
10.0-21.0 GHz GaAs MMIC  
Buffer Amplifier  
March 2007 - Rev 06-Mar-07  
B1008-BD  
Features  
Chip Device Layout  
Excellent Transmit LO/Output Buffer Stage  
Compact Size  
18.0 dB Small Signal Gain  
+20.0 dBm P1dB Compression Point  
5.5 dB Noise Figure  
100% On-Wafer RF, DC and Output Power Testing  
100% Visual Inspection to MIL-STD-883 Method 2010  
General Description  
Mimix Broadband’s two stage 10.0-21.0 GHz GaAs  
MMIC buffer amplifier has a small signal gain of 18.0  
dB with a +20.0 dBm P1dB output compression point.  
This MMIC uses Mimix Broadband’s 0.15 µm GaAs  
PHEMT device model technology, and is based upon  
electron beam lithography to ensure high  
repeatability and uniformity.The chip has surface  
passivation to protect and provide a rugged part with  
backside via holes and gold metallization to allow  
either a conductive epoxy or eutectic solder die  
attach process.This device is well suited for  
Absolute Maximum Ratings  
Supply Voltage (Vd)  
Supply Current (Id1  
Gate Bias Voltage (Vg)  
Input Power (Pin)  
+6.0 VDC  
180 mA  
+0.3 VDC  
+20.0 dBm  
Storage Temperature (Tstg) -65 to +165 OC  
Operating Temperature (Ta) -55 to MTTF Graph1  
Channel Temperature (Tch) MTTF Graph1  
Microwave and Millimeter-wave Point-to-Point Radio,  
LMDS, SATCOM and VSAT applications.  
(1) Channel temperature affects a device's MTTF. It is  
recommended to keep channel temperature as low as  
possible for maximum life.  
Electrical Characteristics (AmbientTemperatureT = 25 oC)  
Parameter  
Frequency Range (f)  
Input Return Loss (S11)  
Output Return Loss (S22)  
Small Signal Gain (S21)  
Gain Flatness ( S21)  
Reverse Isolation (S12)  
Noise Figure (NF)  
Output Power for 1dB Compression (P1dB)  
Saturated Output Power (Psat)  
Drain Bias Voltage (Vd)  
Gate Bias Voltage (Vg2)  
Units  
GHz  
dB  
dB  
dB  
dB  
dB  
dB  
dBm  
dBm  
VDC  
VDC  
mA  
Min.  
10.0  
-
-
-
-
-
-
Typ.  
-
Max.  
21.0  
-
-
-
-
-
-
-
15.0  
17.0  
18.0  
+/-2.0  
35.0  
5.5  
+20.0  
+22.0  
+4.5  
-0.5  
2
-
-
-
-
-1.0  
-
+5.5  
0.0  
155  
Supply Current (Id) (Vd=4.5V,Vg2=-0.5V Typical)  
(2) Measured using constant current.  
130  
Page 1 of 9  
Mimix Broadband, Inc., 10795 Rockley Rd., Houston,Texas 77099  
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com  
Characteristic Data and Specifications are subject to change without notice. ©2007 Mimix Broadband, Inc.  
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept  
their obligation to be compliant with U.S. Export Laws.  
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