18.0-38.0 GHz GaAs MMIC
Buffer Amplifier
February 2008 - Rev 25-Feb-08
B1006-BD
Features
Chip Device Layout
High Dynamic Range/Positive Gain Slope
Excellent LO Driver/Buffer Amplifier
Low Noise or Power Bias Configurations
21.0 dB Small Signal Gain
3.2 dB Noise Figure at Low Noise Bias
+15 dBm P1dB Compression Point at Power Bias
100% On-Wafer RF, DC and Noise Figure Testing
100% Visual Inspection to MIL-STD-883
Method 2010
General Description
Mimix Broadband’s three stage 18.0-38.0 GHz GaAs
MMIC buffer amplifier has a small signal gain of 21.0 dB
with a positive gain slope, and a noise figure of 3.2 dB
across the band.This MMIC uses Mimix Broadband’s
0.15 µm GaAs PHEMT device model technology, and is
based upon electron beam lithography to ensure high
repeatability and uniformity.The chip has surface
passivation to protect and provide a rugged part with
backside via holes and gold metallization to allow
either a conductive epoxy or eutectic solder die attach
process.This device is well suited for Millimeter-wave
Point-to-Point Radio, LMDS, SATCOM and VSAT
applications.
Absolute Maximum Ratings
Supply Voltage (Vd)
Supply Current (Id)
Gate Bias Voltage (Vg)
Input Power (Pin)
+6.0 VDC
120 mA
+0.3 VDC
+5 dBm
Storage Temperature (Tstg) -65 to +165 OC
Operating Temperature (Ta) -55 to MTTF Table
5
5
Channel Temperature (Tch) MTTF Table
(5) Channel temperature affects a device's MTBF. It is
recommended to keep channel temperature as low as
possible for maximum life.
Electrical Characteristics (AmbientTemperatureT = 25 oC)
Parameter
Units
GHz
dB
dB
dB
dB
dB
dB
dBm
dBm
dBm
VDC
VDC
mA
Min.
18.0
4.0
7.0
19.0
-
40.0
-
Typ.
-
Max.
38.0
-
-
27.0
-
-
4.5
-
Frequency Range (f)
Input Return Loss (S11)
3
3
14.0
12.0
21.0
+/-2.0
50.0
3.2
+15.0
+25.0
+18.0
+3.5
-0.3
Output Return Loss (S22)
3
Small Signal Gain (S21)
Gain Flatness ( S21)
3
Reverse Isolation (S12)
4
Noise Figure (NF)
1,2,3
Output Power for 1 dB Compression (P1dB)
-
-
1,2,3
Output Third Order Intercept Point (OIP3)
-
-
1,2,3
Saturated Output Power (Psat)
+14.0
Drain Bias Voltage (Vd1,2)
Gate Bias Voltage (Vg1,2)
Supply Current (Id) (Vd=3.5V,Vg=-0.3V Typical)
-
-1.2
-
+5.5
+0.1
100
50
(1) Optional low noise bias Vd1,2=3.5V, Id=50mA will typically yield 3-4dB decreased P1dB and OIP3.
(2) Measured using constant current.
(3) Unless otherwise indicated, min/max over 18.0-38.0 GHz and biased at Vd=5.5V, Id1=50mA, Id2=50mA.
(4) Unless otherwise indicated, min/max over 20.0-38.0 GHz and biased at Vd=3.5V, Id1=25mA, Id2=25mA.
Page 1 of 11
Mimix Broadband, Inc., 10795 Rockley Rd., Houston,Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Characteristic Data and Specifications are subject to change without notice. ©2008 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
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