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XB1006-BD-EV1

更新时间： 2024-11-18 03:14:47
品牌 Logo 应用领域
MIMIX 缓冲放大器
页数 文件大小 规格书
11页 782K
描述
18.0-38.0 GHz GaAs MMIC Buffer Amplifier

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18.0-38.0 GHz GaAs MMIC  
Buffer Amplifier  
February 2008 - Rev 25-Feb-08  
B1006-BD  
Features  
Chip Device Layout  
High Dynamic Range/Positive Gain Slope  
Excellent LO Driver/Buffer Amplifier  
Low Noise or Power Bias Configurations  
21.0 dB Small Signal Gain  
3.2 dB Noise Figure at Low Noise Bias  
+15 dBm P1dB Compression Point at Power Bias  
100% On-Wafer RF, DC and Noise Figure Testing  
100% Visual Inspection to MIL-STD-883  
Method 2010  
General Description  
Mimix Broadband’s three stage 18.0-38.0 GHz GaAs  
MMIC buffer amplifier has a small signal gain of 21.0 dB  
with a positive gain slope, and a noise figure of 3.2 dB  
across the band.This MMIC uses Mimix Broadband’s  
0.15 µm GaAs PHEMT device model technology, and is  
based upon electron beam lithography to ensure high  
repeatability and uniformity.The chip has surface  
passivation to protect and provide a rugged part with  
backside via holes and gold metallization to allow  
either a conductive epoxy or eutectic solder die attach  
process.This device is well suited for Millimeter-wave  
Point-to-Point Radio, LMDS, SATCOM and VSAT  
applications.  
Absolute Maximum Ratings  
Supply Voltage (Vd)  
Supply Current (Id)  
Gate Bias Voltage (Vg)  
Input Power (Pin)  
+6.0 VDC  
120 mA  
+0.3 VDC  
+5 dBm  
Storage Temperature (Tstg) -65 to +165 OC  
Operating Temperature (Ta) -55 to MTTF Table  
5
5
Channel Temperature (Tch) MTTF Table  
(5) Channel temperature affects a device's MTBF. It is  
recommended to keep channel temperature as low as  
possible for maximum life.  
Electrical Characteristics (AmbientTemperatureT = 25 oC)  
Parameter  
Units  
GHz  
dB  
dB  
dB  
dB  
dB  
dB  
dBm  
dBm  
dBm  
VDC  
VDC  
mA  
Min.  
18.0  
4.0  
7.0  
19.0  
-
40.0  
-
Typ.  
-
Max.  
38.0  
-
-
27.0  
-
-
4.5  
-
Frequency Range (f)  
Input Return Loss (S11)  
3
3
14.0  
12.0  
21.0  
+/-2.0  
50.0  
3.2  
+15.0  
+25.0  
+18.0  
+3.5  
-0.3  
Output Return Loss (S22)  
3
Small Signal Gain (S21)  
Gain Flatness ( S21)  
3
Reverse Isolation (S12)  
4
Noise Figure (NF)  
1,2,3  
Output Power for 1 dB Compression (P1dB)  
-
-
1,2,3  
Output Third Order Intercept Point (OIP3)  
-
-
1,2,3  
Saturated Output Power (Psat)  
+14.0  
Drain Bias Voltage (Vd1,2)  
Gate Bias Voltage (Vg1,2)  
Supply Current (Id) (Vd=3.5V,Vg=-0.3V Typical)  
-
-1.2  
-
+5.5  
+0.1  
100  
50  
(1) Optional low noise bias Vd1,2=3.5V, Id=50mA will typically yield 3-4dB decreased P1dB and OIP3.  
(2) Measured using constant current.  
(3) Unless otherwise indicated, min/max over 18.0-38.0 GHz and biased at Vd=5.5V, Id1=50mA, Id2=50mA.  
(4) Unless otherwise indicated, min/max over 20.0-38.0 GHz and biased at Vd=3.5V, Id1=25mA, Id2=25mA.  
Page 1 of 11  
Mimix Broadband, Inc., 10795 Rockley Rd., Houston,Texas 77099  
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com  
Characteristic Data and Specifications are subject to change without notice. ©2008 Mimix Broadband, Inc.  
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept  
their obligation to be compliant with U.S. Export Laws.  
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