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XB1004-BD-EV1 PDF预览

XB1004-BD-EV1

更新时间: 2022-04-23 23:00:11
品牌 Logo 应用领域
MIMIX 缓冲放大器
页数 文件大小 规格书
10页 290K
描述
16.0-30.0 GHz GaAs MMIC Buffer Amplifier

XB1004-BD-EV1 数据手册

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16.0-30.0 GHz GaAs MMIC  
Buffer Amplifier  
June 2007 - Rev 12-Jun-07  
B1004-BD  
Features  
Chip Device Layout  
High Dynamic Range  
Excellent LO Driver/Buffer Amplifier  
Low Noise or Power Bias Configurations  
21.0 dB Small Signal Gain  
2.2 dB Noise Figure at Low Noise Bias  
+19.0 dBm P1dB Compression Point at Power Bias  
100% On-Wafer RF, DC and Noise Figure Testing  
100% Visual Inspection to MIL-STD-883  
Method 2010  
General Description  
Mimix Broadband’s three stage 16.0-30.0 GHz GaAs  
MMIC buffer amplifier has a small signal gain of 21.0 dB  
with a noise figure of 2.2 dB across the band.This MMIC  
uses Mimix Broadband’s 0.15 µm GaAs PHEMT device  
model technology, and is based upon electron beam  
lithography to ensure high repeatability and uniformity.  
The chip has surface passivation to protect and provide  
a rugged part with backside via holes and gold  
metallization to allow either a conductive epoxy or  
eutectic solder die attach process.This device is well  
suited for Millimeter-wave Point-to-Point Radio, LMDS,  
SATCOM and VSAT applications.  
Absolute Maximum Ratings  
Supply Voltage (Vd)  
Supply Current (Id)  
Gate Bias Voltage (Vg)  
Input Power (Pin)  
+6.5 VDC  
200 mA  
+0.3 VDC  
+5 dBm  
Storage Temperature (Tstg) -65 to +165 OC  
Operating Temperature (Ta) -55 to MTTF Table  
5
5
Channel Temperature (Tch) MTTF Table  
(5) Channel temperature affects a device's MTBF. It is  
recommended to keep channel temperature as low as  
possible for maximum life.  
Electrical Characteristics (AmbientTemperatureT = 25 oC)  
Parameter  
Units  
GHz  
dB  
dB  
dB  
dB  
dB  
dB  
dBm  
dBm  
dBm  
VDC  
VDC  
mA  
Min.  
16.0  
6.0  
10.0  
18.0  
-
40.0  
-
Typ.  
-
Max.  
30.0  
-
-
24.0  
-
-
3.0  
-
Frequency Range (f)  
Input Return Loss (S11)  
3
3
14.0  
14.0  
21.0  
+/-1.0  
50.0  
2.2  
+19.0  
+29.0  
+22.0  
+4.0  
-0.3  
Output Return Loss (S22)  
3
Small Signal Gain (S21)  
Gain Flatness ( S21)  
3
Reverse Isolation (S12)  
4
Noise Figure (NF)  
1,2,3  
Output Power for 1 dB Compression (P1dB)  
-
-
-
1,2,3  
Output Third Order Intercept Point (OIP3)  
-
-
1,2,3  
Saturated Output Power (Psat)  
Drain Bias Voltage (Vd1,2)  
Gate Bias Voltage (Vg1c,2c)  
Supply Current (Id) (Vd=4.0V,Vg=-0.3V Typical)  
-
-1.2  
-
+6.0  
+0.1  
180  
90  
(1) Optional low noise bias Vd1,2=4.0V, Id=90mA will typically yield 3-4dB decreased P1dB and OIP3.  
(2) Measured using constant current.  
(3) Unless otherwise indicated Min/Max over 17.0-28.0 GHz and biased at Vd=6.0V, Id1=90mA, Id2=90mA.  
(4) Unless otherwise indicated Min/Max over 17.0-28.0 GHz and biased at Vd=4.0V, Id1=45mA, Id2=45mA.  
Page 1 of 10  
Mimix Broadband, Inc., 10795 Rockley Rd., Houston,Texas 77099  
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com  
Characteristic Data and Specifications are subject to change without notice. ©2007 Mimix Broadband, Inc.  
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept  
their obligation to be compliant with U.S. Export Laws.  

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