XB1006-BD
Buffer Amplifier
18 - 38 GHz
Rev. V1
Features
Chip Device Layout
High Dynamic Range/Positive Gain Slope
Excellent LO Driver/Buffer Amplifier
Low Noise or Power Bias Configurations
21.0 dB Small Signal Gain
3.2 dB Noise Figure at Low Noise Bias
+15 dBm P1dB Compression Point at Power Bias
100% On-Wafer RF, DC and Noise Figure
Testing
100% Visual Inspection to MIL-STD-883 Method
2010
RoHS* Compliant and 260°C Reflow Compatible
Description
M/A-COM Tech’s three stage 18.0-38.0 GHz GaAs
MMIC buffer amplifier has a small signal gain of 21.0
dB with a positive gain slope, and a noise figure of
3.2 dB across the band. This MMIC uses M/A-COM
Tech’s GaAs PHEMT device model technology, and
is based upon electron beam lithography to ensure
high repeatability and uniformity. The chip has
surface passivation to protect and provide a rugged
part with backside via holes and gold metallization to
allow either a conductive epoxy or eutectic solder
die attach process. This device is well suited for
Millimeter-wave Point-to-Point Radio, LMDS,
SATCOM and VSAT applications.
Absolute Maximum Ratings
Parameter
Absolute Max.
Supply Voltage (Vd)
Supply Current (Id)
+6.0 VDC
120 mA
Gate Bias Voltage (Vg)
Input Power (Pin)
+0.3 VDC
+5 dBm
Storage Temperature (Tstg)
-65 °C to +165 °C
-55 °C to MTTF
Operating Temperature (Ta)
Channel Temperature (Tch)
Table1
MTTF Table1
1. Channel temperature directly affects a device's MTTF. Chan-
nel temperature should be kept as low as possible to maximize
lifetime.
Ordering Information
Part Number
Package
“V” - vacuum release
XB1006-BD-000V
gel paks
XB1006-BD-000W
XB1006-BD-EV1
“W” - waffle trays
evaluation module
1
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