Datasheet > WTR03N039L

WTR03N039L

更新时间： 2024-11-07 14:48:03

品牌	Logo	应用领域
先科 - SWST		晶体
页数	文件大小	规格书
8页	512K
描述
功率金氧半电晶体

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中文翻译

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数据手册

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WTR03N039L 数据手册

WTR03N039L-HAF

N-Channel Enhancement Mode MOSFET

Drain

Features

• Low R_{DS( ON )}

• Low Input Capacitance

• Low Input/Output Leakage

• Halogen and Antimony Free(HAF),

RoHS compliant

Gate

1.Gate 2.Drain 3.Source

TO-252 Plastic Package

Source

Application

• Motor/Body Load Control

• Load Switch

• DC-DC converters and Off-line UPS

Key Parameters

Parameter

BV_DSS

Value

Unit

3.9 @ V_GS= 10 V

4.5 @ V_GS= 4.5 V

1.4

R_DS(ON)Max

mΩ

V_GS(th)typ

Q_gtyp

74 @ V_GS= 10 V

Absolute Maximum Ratings (at T_a= 25℃ unless otherwise specified)

Parameter Symbol

Value

Unit

Drain-Source Voltage

Gate-Source Voltage

V_DS

V_GS

± 20

T_c= 25℃

T_c= 100℃

Continuous Drain Current

I_D

Peak Drain Current, Pulsed ¹⁾

Avalanche Current

I_DM

I_AS

350

Single Pulse Avalanche Energy ²⁾

E_AS

T_c= 25℃

T_c= 100℃

41.6

16.6

Power Dissipation

P_D

Operating Junction and Storage Temperature Range

T_J, T_stg

- 55 to + 150

℃

Thermal Characteristics

Parameter

Symbol

R_θJC

Max.

Unit

Thermal Resistance from Junction to Case

℃

Thermal Resistance from Junction to Ambient ³⁾

R_θJA

¹⁾Pulse Test: Pulse Width ≤ 100 μs, Duty Cycle ≤ 2%, Repetitive rating, pulse width limited by junction temperature T_J(MAX)= 150°C.

²⁾Limited by T_J(MAX), starting T_J= 25 °C, L = 0.1 mH, R_g= 25 Ω, I_D= 39 A, V_GS= 10 V.

³⁾Device mounted on FR-4 substrate PC board, 2oz copper, with 1-inch square copper plate in still air.

1 / 8

Dated: 02/12/2020 Rev: 01

12 3 4 5 6 7 8

中文翻译

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