Datasheet > WTR04N065L-CH

WTR04N065L-CH

更新时间： 2024-11-30 14:52:15

品牌	Logo	应用领域
先科 - SWST		晶体
页数	文件大小	规格书
7页	566K
描述
功率金氧半电晶体

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数据手册

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WTR04N065L-CH 数据手册

WTR04N065L-CH

N-Channel Enhancement Mode MOSFET

Drain

Features

• Low Gate Charge

• AEC-Q101 Qualified

• Halogen and Antimony Free(HAF),

RoHS compliant

Gate

Source

1.Gate 2.Drain 3.Source

TO-252 Plastic Package

Applications

• synchronous buck converter

Key Parameters

Parameter

BV_DSS

Value

Unit

6.5 @ V_GS= 10 V

8 @ V_GS= 4.5 V

1.4

R_DS(ON)Max

mΩ

V_GS(th)typ

Q_gtyp

58 @ V_GS= 10 V

Absolute Maximum Ratings(at T_a= 25℃ unless otherwise specified)

Parameter

Symbol

V_DS

Value

Unit

Drain-Source Voltage

Gate-Source Voltage

V_GS

± 20

T_c= 25℃

Drain Current - Continuous

I_D

T_c= 100℃

Peak Drain Current, Pulsed ¹⁾

Single-Pulse Avalanche Current

Single-Pulse Avalanche Energy ²⁾

Power Dissipation

I_DM

I_AS

240

34.3

E_AS

58.8

℃

P_D

43.5

T_c= 25℃

Operating Junction and Storage Temperature Range

T_j, T_stg

- 55 to + 150

Thermal Characteristics

Parameter

Symbol

R_θJC

Max.

2.8

Unit

Thermal Resistance from Junction to Case

℃

Thermal Resistance from Junction to Ambient ³⁾

¹⁾Pulse Test: Pulse Width ≤ 100 μs, Duty Cycle ≤ 2%, Repetitive rating, pulse width limited by junction temperature T_J(MAX)= 150°C.

²⁾Limited by T_J(MAX), starting T_J= 25 °C, L = 0.1 mH, R_g= 25 Ω, I_AS= 34.3 A, V_GS= 10 V.

R_θJA

³⁾Device mounted on FR-4 substrate PC board, 2oz copper, with 1-inch square copper plate in still air.

1 / 7

Dated: 11/10/2022 Rev: 01

12 3 4 5 6 7

中文翻译

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