Datasheet > WTR03N056L

WTR03N056L

更新时间： 2024-11-07 14:55:47

品牌	Logo	应用领域
先科 - SWST		晶体
页数	文件大小	规格书
8页	585K
描述
功率金氧半电晶体

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中文翻译

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数据手册

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WTR03N056L 数据手册

WTR03N056L-HAF

N-Channel Enhancement Mode MOSFET

Features

Drain

• Low R_DS(ON)

• Surface-mounted package

• Low Gate-Source Threshold Voltage

• Halogen and Antimony Free(HAF),

RoHS compliant

Gate

Source

1.Gate 2.Drain 3.Source

TO-252 Plastic Package

Application

• DC-DC converters

Key Parameters

Parameter

BV_DSS

Value

Unit

5.6 @ V_GS= 10 V

6.8 @ V_GS= 4.5 V

1.5

R_DS(ON)Max

mΩ

V_GS(th)typ

Q_gtyp

42 @ V_GS= 10 V

Absolute Maximum Ratings (at T_a= 25℃ unless otherwise specified)

Symbol

Value

Unit

Parameter

V_DS

Drain-Source Voltage

Gate-Source Voltage

V_GS

± 20

T_c= 25℃

T_c= 100℃

I_D

Continuous Drain Current

Peak Drain Current, Pulsed ¹⁾

Avalanche Current

I_DM

I_AS

300

39.2

Single Pulse Avalanche Energy ²⁾

E_AS

76.8

℃

P_tot

37.6

Power Dissipation

T_c= 25℃

T_J, T_stg

- 55 to + 150

Operating Junction and Storage Temperature Range

Thermal Characteristics

Parameter

Symbol

R_θJC

Max.

3.3

Unit

℃/W

Thermal Resistance from Junction to Case

Thermal Resistance from Junction to Ambient ³⁾

R_θJA

¹⁾Pulse Test: Pulse Width ≤ 100 μs,Duty Cycle ≤ 2%,Repetitive rating, pulse width limited by junction temperature T_J(MAX)= 150°C.

^2).Limited by T_J(MAX), starting T_J= 25 °C, L = 0.1 mH, R_g= 25 Ω, I_D= 39.2 A, V_GS= 10 V.

³⁾Device mounted on FR-4 substrate PC board, 2oz copper, with 1-inch square copper plate in still air.

1 / 8

Dated: 31/08/2021 Rev: 01

12 3 4 5 6 7 8

中文翻译

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