Datasheet > WNS20S100CX

WNS20S100CX

更新时间： 2024-01-14 17:55:13

品牌	Logo	应用领域
瑞能 - WEEN		二极管
页数	文件大小	规格书
11页	257K
描述
Dual power Schottky diode

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技术参数
数据手册

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WNS20S100CX 技术参数

生命周期：	Active	Reach Compliance Code：	unknown
风险等级：	5.71	二极管类型：	RECTIFIER DIODE
Base Number Matches：	1

WNS20S100CX 数据手册

WNS20S100CX

Dual power Schottky diode

11 March 2019

Product data sheet

1. General description

Dual common cathode power Schottky diode designed for high frequency switched mode power

supplies in a SOT186A (TO-220F) "full pack" plastic package.

2. Features and benefits

•

Trench structure

•

High junction temperature up to 150°C

Low forward condution voltage

Negligible switching losses

3. Applications

•

DC to DC converters

Freewheeling diode

OR-ing diode

Switched mode power supply rectifier

4. Quick reference data

Table 1. Quick reference data

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

V_RRM

repetitive peak reverse

voltage

100

I_F(AV)

I_O(AV)

average forward

current

δ = 0.5 ; T_h≤ 84 °C; square-wave

pulse; per diode; Fig. 1; Fig. 2; Fig. 3

average output current δ = 0.5 ; T_h≤ 60 °C; square-wave

pulse; both diodes conducting

Static characteristics

V_Fforward voltage

I_F= 3 A; T_j= 25 °C; Fig. 6; per diode

I_F= 3 A; T_j= 125 °C; Fig. 6; per diode

I_F= 10 A; T_j= 25 °C; Fig. 6; per diode

I_F= 10 A; T_j= 125 °C; Fig. 6; per diode

0.56

0.53

0.89

0.73

0.61

0.58

0.95

0.8

I_R

reverse current

V_R= 100 V; T_j= 25 °C; Fig. 7; Fig. 8;

per diode

µA

V_R= 100 V; T_j= 125 °C; Fig. 7; Fig. 8;

per diode

12 3 4 5 6 7...11

中文翻译

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