Datasheet > WNS30H100C

WNS30H100C

更新时间： 2022-02-26 14:17:04

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描述
Dual power Schottky diode

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WNS30H100C 数据手册

WNS30H100C

Dual power Schottky diode

26 April 2019

Product data sheet

1. General description

Dual common cathode power Schottky diode designed for high frequency switched mode power

supplies in a TO-220 plastic package.

2. Features and benefits

•

Trench structure

•

High junction temperature up to 150°C

Low forward conduction voltage

Negligible switching losses

3. Applications

•

DC to DC converters

Freewheeling diode

OR-ing diode

Switched mode power supply rectifier

4. Quick reference data

Table 1. Quick reference data

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

V_RRM

repetitive peak reverse

voltage

100

I_F(AV)

I_O(AV)

average forward

current

δ = 0.5 ; T_mb≤ 134 °C; square-wave

pulse; per diode; Fig. 1; Fig. 2; Fig. 3

average output current δ = 0.5 ; T_mb≤ 133 °C; square-wave

pulse; both diodes conducting

Static characteristics

V_Fforward voltage

I_F= 5 A; T_j= 25 °C; Fig. 6; per diode

I_F= 5 A; T_j= 125 °C; Fig. 6; per diode

I_F= 10 A; T_j= 25 °C; Fig. 6; per diode

I_F= 10 A; T_j= 125 °C; Fig. 6; per diode

I_F= 15 A; T_j= 25 °C; Fig. 6; per diode

I_F= 15 A; T_j= 125 °C; Fig. 6; per diode

0.48

0.41

0.56

0.53

0.64

0.6

0.55

0.48

0.63

0.6

0.71

0.67

I_R

reverse current

V_R= 100 V; T_j= 25 °C; Fig. 7; Fig. 8;

per diode

µA

V_R= 100 V; T_j= 125 °C; Fig. 7; Fig. 8;

per diode

12 3 4 5 6 7...11

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