Datasheet > WNSC2D04650X

WNSC2D04650X

更新时间： 2024-04-09 18:59:36

品牌	Logo	应用领域
瑞能 - WEEN		/
页数	文件大小	规格书
11页	456K
描述
Silicon Carbide Schottky diode in a TO220F-2L plastic package, designed for high frequency switched-mode power supplies.

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WNSC2D04650X 数据手册

WNSC2D04650X

Silicon Carbide Diode

Rev.01 - 21 January 2021

Product data sheet

1. General description

Silicon Carbide Schottky diode in a TO220F-

2L plastic package, designed for high

frequency switched-mode power supplies.

alogen-Free

RoHS

2. Features and beneﬁts

•

Highly stable switching performance

Extremely fast reverse recovery time

Superior in eﬃciency to Silicon Diode alternatives

Reduced losses in associated MOSFET

Reduced EMI

Reduced cooling requirements

RoHS compliant

Insulated package rated at 2500V RMS

3. Applications

•

Power factor correction

Telecom / Server SMPS

UPS

PV inverter

PC Silverbox

LED / OLED TV

Motor Drives

4. Quick reference data

Table 1. Quick reference data

Symbol Parameter

Conditions

Values

Unit

Absolute maximum rating

V_RRM

repetitive peak reverse

voltage

650

I_F(AV)

average forward current δ = 0.5 ; square-wave pulse; T_h≤ 87 °C;

Fig. 1; Fig. 2; Fig. 3

Symbol Parameter

Static characteristics

Conditions

Min

Typ

Max

Unit

V_F

forward voltage

I_F= 4 A; T_j= 25 °C; Fig. 5

I_F= 4 A; T_j= 150 °C; Fig. 5

1.5

1.7

1.8

2.2

12 3 4 5 6 7...11

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