Datasheet > WNSC101200W

WNSC101200W

更新时间： 2022-02-26 14:17:03

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Silicon Carbide Diode

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WNSC101200W 数据手册

WNSC101200W

Silicon Carbide Diode

Rev.02 - 2 July 2019

Product data sheet

1. General description

Silicon Carbide Schottky diode in a TO247-2L

plastic package, designed for high frequency

switched-mode power supplies.

alogen-Free

RoHS

2. Features and beneﬁts

•

Highly stable switching performance

•

High forward surge capability I_FSM

Extremely fast reverse recovery time

Superior in eﬃciency to Silicon Diode alternatives

Reduced losses in associated MOSFET

Reduced EMI

Reduced cooling requirements

RoHS compliant

High junction operating temperature capability (T_j(max)= 175 °C)

3. Applications

•

Power factor correction

Telecom / Server SMPS

UPS

PV inverter

PC Silverbox

LED / OLED TV

Motor Drives

4. Quick reference data

Table 1. Quick reference data

Symbol Parameter

Conditions

Values

Unit

Absolute maximum rating

V_RRM

I_F(AV)

T_j

repetitive peak reverse

voltage

1200

average forward current δ = 0.5 ; square-wave pulse; T_mb≤ 138 °C;

Fig. 1; Fig. 2; Fig. 3; Fig. 4

junction temperature

175

°C

Unit

Symbol Parameter

Static characteristics

Conditions

Min

Typ

Max

V_F

forward voltage

I_F= 10 A; T_j= 25 °C; Fig. 6

I_F= 10 A; T_j= 150 °C; Fig. 6

I_F= 10 A; T_j= 175 °C; Fig. 6

1.4

1.85

1.6

2.3

2.6

Dynamic characteristics

Q_rrecovered charge

I_F= 10 A; V_R= 400 V; dI_F/dt = 500 A/μs;

T_j= 25 °C; Fig. 8

12 3 4 5 6 7...11

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