Datasheet > WNSC201200W

WNSC201200W

更新时间： 2022-02-26 14:17:03

品牌	Logo	应用领域
瑞能 - WEEN		/
页数	文件大小	规格书
11页	453K
描述
Silicon Carbide Diode

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

WNSC201200W 数据手册

WNSC201200W

Silicon Carbide Diode

Rev.02 - 2 July 2019

Product data sheet

1. General description

Silicon Carbide Schottky diode in a TO247-2L

plastic package, designed for high frequency

switched-mode power supplies.

alogen-Free

RoHS

2. Features and beneﬁts

•

Highly stable switching performance

•

High forward surge capability I_FSM

Extremely fast reverse recovery time

Superior in eﬃciency to Silicon Diode alternatives

Reduced losses in associated MOSFET

Reduced EMI

Reduced cooling requirements

RoHS compliant

High junction operating temperature capability (T_j(max)= 175 °C)

3. Applications

•

Power factor correction

Telecom / Server SMPS

UPS

PV inverter

PC Silverbox

LED / OLED TV

Motor Drives

4. Quick reference data

Table 1. Quick reference data

Symbol Parameter

Conditions

Values

Unit

Absolute maximum rating

V_RRM

I_F(AV)

T_j

repetitive peak reverse

voltage

1200

average forward current δ = 0.5 ; square-wave pulse; T_mb≤ 131 °C;

Fig. 1; Fig. 2; Fig. 3; Fig. 4

junction temperature

175

°C

Unit

Symbol Parameter

Static characteristics

Conditions

Min

Typ

Max

V_F

forward voltage

I_F= 20 A; T_j= 25 °C; Fig. 6

I_F= 20 A; T_j= 150 °C; Fig. 6

I_F= 20 A; T_j= 175 °C; Fig. 6

1.4

1.85

1.6

2.3

2.6

Dynamic characteristics

Q_rrecovered charge

I_F= 20 A; V_R= 400 V; dI_F/dt = 500 A/μs;

T_j= 25 °C; Fig. 8

12 3 4 5 6 7...11

中文翻译

下载PDF

与WNSC201200W相关器件

型号	品牌	获取价格	描述	数据表
WNSC2D021200	WEEN	获取价格	Silicon Carbide Schottky diode in a TO220-2L plastic package, designed for high frequency
WNSC2D021200D	WEEN	获取价格	Silicon Carbide Schottky diode in a TO252 (DPAK) plastic package, designed for high freque
WNSC2D03650MB	WEEN	获取价格	Silicon Carbide Schottky diode in a SMB plastic package, designed for high frequency switc
WNSC2D04650	WEEN	获取价格	Silicon Carbide Schottky diode in a TO220-2L?plastic package, designed for high frequency
WNSC2D04650D	WEEN	获取价格	Silicon Carbide Schottky diode in a TO252 (DPAK) plastic package, designed for high freque
WNSC2D04650T	WEEN	获取价格	Silicon Carbide Schottky diode in a DFN 8*8 plastic package, designed for high frequency s
WNSC2D04650X	WEEN	获取价格	Silicon Carbide Schottky diode in a TO220F-2L plastic package, designed for high frequency
WNSC2D051200	WEEN	获取价格	Silicon Carbide Schottky diode in a TO220-2L plastic package, designed for high frequency
WNSC2D051200D	WEEN	获取价格	Silicon Carbide Schottky diode in a TO252 (DPAK) plastic package, designed for high freque
WNSC2D051400D	WEEN	获取价格	Silicon Carbide Schottky diode in a TO252 (DPAK) plastic package, designed for high freque