Datasheet > WNSC2D10650T

WNSC2D10650T

更新时间： 2024-11-08 17:00:51

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描述
Silicon Carbide Schottky diode in a DFN 8*8 plastic package, designed for high frequency switched-mode power supplies.

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WNSC2D10650T 数据手册

WNSC2D10650T

Silicon Carbide Diode

Rev.01 - 21 January 2021

Product data sheet

1. General description

Silicon Carbide Schottky diode in a DFN 8*8

plastic package, designed for high frequency

switched-mode power supplies.

alogen-Free

RoHS

Lead-Free

2. Features and beneﬁts

•

Highly stable switching performance

Extremely fast reverse recovery time

Superior in eﬃciency to Silicon Diode alternatives

Reduced losses in associated MOSFET

Reduced EMI

•

Reduced cooling requirements

RoHS compliant

3. Applications

•

Power factor correction

Telecom / Server SMPS

UPS

PV inverter

PC Silverbox

LED / OLED TV

Motor Drives

4. Quick reference data

Table 1. Quick reference data

Symbol Parameter

Conditions

Values

Unit

Absolute maximum rating

V_RRM

I_F(AV)

T_j

repetitive peak reverse

voltage

650

average forward current δ = 0.5 ; square-wave pulse; T ≤ 138 °C;

Fig. 1; Fig. 2; Fig. 3

junction temperature

175

°C

Symbol Parameter

Static characteristics

Conditions

Min

Typ

Max

Unit

V_F

forward voltage

I_F= 10 A; T_j= 25 °C; Fig. 5

I_F= 10 A; T_j= 150 °C; Fig. 5

1.5

1.8

1.7

2.2

Dynamic characteristics

Q_rrecovered charge

I_F= 10 A; dI_F/dt = 500 A/μs; V_R= 400 V;

T_j= 25 °C; Fig. 7

12 3 4 5 6 7...11

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