WNS40H100CB
Dual power Schottky diode
2 March 2018
Product data sheet
1. General description
Dual common cathode power Schottky diode designed for high frequency switched mode power
supplies in a TO-263(D2PAK) plastic package.
2. Features and benefits
•
Trench structure
•
•
•
High junction temperature up to 150°C
High efficiency
Low forward voltage drop, negligible switching losses
3. Applications
•
•
•
DC to DC converters
Freewheeling diode
OR-ing diode
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VRRM
repetitive peak reverse
voltage
-
-
100
V
IF(AV)
IO(AV)
average forward
current
δ = 0.5 ; Tmb ≤ 133 °C; square-wave
pulse; per diode; Fig. 1; Fig. 2; Fig. 3
-
-
-
-
20
40
A
A
average output current δ = 0.5 ; Tmb ≤ 130 °C; square-wave
pulse; both diodes conducting
Static characteristics
VF forward voltage
IF = 10 A; Tj = 25 °C; Fig. 6; per diode
IF = 10 A; Tj = 125 °C; Fig. 6; per diode
IF = 20 A; Tj = 25 °C; Fig. 6; per diode
IF = 20 A; Tj = 125 °C; Fig. 6; per diode
-
-
-
-
-
0.53
0.49
0.64
0.61
-
0.59
0.56
0.71
0.68
50
V
V
V
V
IR
reverse current
VR = 100 V; Tj = 25 °C; Fig. 7; Fig. 8;
per diode
µA
VR = 100 V; Tj = 125 °C; Fig. 7; Fig. 8;
per diode
-
-
40
mA