Datasheet > WNS40H100CB

WNS40H100CB

更新时间： 2024-02-05 20:11:06

品牌	Logo	应用领域
瑞能 - WEEN		二极管
页数	文件大小	规格书
11页	257K
描述
Dual power Schottky diode

阅读下载

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

WNS40H100CB 技术参数

生命周期：	Active	Reach Compliance Code：	unknown
风险等级：	5.73	二极管类型：	RECTIFIER DIODE
Base Number Matches：	1

WNS40H100CB 数据手册

WeEn Semiconductors

WNS40H100CB

Dual power Schottky diode

9. Characteristics

Table 6. Characteristics

Symbol

Static characteristics

V_Fforward voltage

Parameter

Conditions

Min

Typ

Max

Unit

I_F= 10 A; T_j= 25 °C; Fig. 6; per diode

I_F= 10 A; T_j= 125 °C; Fig. 6; per diode

I_F= 20 A; T_j= 25 °C; Fig. 6; per diode

I_F= 20 A; T_j= 125 °C; Fig. 6; per diode

0.53

0.49

0.64

0.61

0.59

0.56

0.71

0.68

I_R

reverse current

V_R= 100 V; T_j= 25 °C; Fig. 7; Fig. 8;

per diode

µA

V_R= 100 V; T_j= 125 °C; Fig. 7; Fig. 8;

per diode

ama2-006

ama4-007

(4)

(A)

(μA)

(3)

(2)

(1)

(2)

(3)

(1)

-1

0.2

0.4

0.6

0.8

1.2

100

V (V)

(V)

V_o= 0.557 V; R_s= 0.0071 Ω

(1) T_j= 150 °C; typical values

(2) T_j= 150 °C; maximum values

(3) T_j= 25 °C; maximum values

(1) T_j= 25 °C; typical values

(2) T_j= 100 °C; typical values

(3) T_j= 125 °C; typical values

(4) T_j= 150 °C; typical values

Fig. 6. Forward current as a function of forward voltage; Fig. 7. Reverse leakage current as a function of reverse

per diode

voltage; per diode; typical values

WNS40H100CB

All information provided in this document is subject to legal disclaimers.

Product data sheet

2 March 2018

6 / 11

1...3 4 567 8 9...11

下载PDF

与WNS40H100CB相关器件

型号	品牌	描述	获取价格	数据表
WNS40H100CG	WEEN	Dual power Schottky diode	获取价格
WNSC021200	WEEN	Silicon Carbide Diode	获取价格
WNSC051200	WEEN	Silicon Carbide Diode	获取价格
WNSC101200	WEEN	Silicon Carbide Diode	获取价格
WNSC101200CW	WEEN	Silicon Carbide Diode	获取价格
WNSC101200W	WEEN	Silicon Carbide Diode	获取价格