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WNS40H100CB PDF预览

WNS40H100CB

更新时间: 2024-02-20 18:22:17
品牌 Logo 应用领域
瑞能 - WEEN 二极管
页数 文件大小 规格书
11页 257K
描述
Dual power Schottky diode

WNS40H100CB 技术参数

生命周期:ActiveReach Compliance Code:unknown
风险等级:5.73二极管类型:RECTIFIER DIODE
Base Number Matches:1

WNS40H100CB 数据手册

 浏览型号WNS40H100CB的Datasheet PDF文件第2页浏览型号WNS40H100CB的Datasheet PDF文件第3页浏览型号WNS40H100CB的Datasheet PDF文件第4页浏览型号WNS40H100CB的Datasheet PDF文件第6页浏览型号WNS40H100CB的Datasheet PDF文件第7页浏览型号WNS40H100CB的Datasheet PDF文件第8页 
WeEn Semiconductors  
WNS40H100CB  
Dual power Schottky diode  
8. Thermal characteristics  
Table 5. Thermal characteristics  
Symbol  
Parameter  
Conditions  
Min  
Typ  
Max  
1
Unit  
K/W  
K/W  
Rth(j-mb)  
thermal resistance  
from junction to  
mounting base  
per diode; Fig. 5  
both diodes conducting  
-
-
-
-
0.6  
Rth(j-a)  
thermal resistance  
from junction to  
ambient  
in free air  
-
60  
-
K/W  
ama4-005  
10  
Zth(j-mb)  
(K/W)  
1
-1  
-2  
-3  
-4  
10  
10  
10  
10  
δ = 0.5  
δ = 0.3  
t
p
P
δ = 0.1  
δ =  
T
δ = 0.05  
δ = 0.02  
δ = 0.01  
single pulse  
t
t
p
T
-6  
-5  
-4  
-3  
-2  
-1  
10  
10  
10  
10  
10  
10  
1
10  
tp (s)  
Fig. 5. Transient thermal impedance from junction to mounting base as a function of pulse duration; maximum  
values; per diode  
©
WNS40H100CB  
All information provided in this document is subject to legal disclaimers.  
WeEn Semiconductors Co., Ltd. 2018. All rights reserved  
Product data sheet  
2 March 2018  
5 / 11  
 
 

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