Datasheet > WNSC101200CW

WNSC101200CW

更新时间： 2022-02-26 14:17:03

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Silicon Carbide Diode

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WNSC101200CW 数据手册

WNSC101200CW

Silicon Carbide Diode

Rev.02 - 2 July 2019

Product data sheet

1. General description

Dual Silicon Carbide Schottky diode in a

3-lead TO247 plastic package, designed for

high frequency switched-mode power

supplies.

alogen-Free

RoHS

Lead-Free

2. Features and beneﬁts

•

Highly stable switching performance

High forward surge capability I_FSM

Extremely fast reverse recovery time

Superior in eﬃciency to Silicon Diode alternatives

Reduced losses in associated MOSFET

Reduced EMI

Reduced cooling requirements

RoHS compliant

High junction operating temperature capability (T_j(max)= 175 °C)

3. Applications

•

Power factor correction

Telecom / Server SMPS

UPS

PV inverter

PC Silverbox

LED / OLED TV

Motor Drives

4. Quick reference data

Table 1. Quick reference data

Symbol Parameter

Conditions

Values

Unit

Absolute maximum rating

V_RRM

repetitive peak reverse

voltage

1200

I_O(AV)

limiting average output

current

δ = 0.5 ; T_mb≤ 147 °C; square-wave pulse;

both diodes conducting;

Fig. 1; Fig. 2; Fig. 3; Fig. 4

T_j

junction temperature

175

°C

Symbol Parameter

Static characteristics

Conditions

Min

Typ

Max

Unit

V_F

forward voltage

I_F= 5 A; T_j= 25 °C; per diode; Fig. 6

I_F= 5 A; T_j= 150 °C; per diode; Fig. 6

I_F= 5 A; T_j= 175 °C; per diode; Fig. 6

1.4

1.85

1.6

2.3

2.6

Dynamic characteristics

Q_rrecovered charge

I_F= 5 A; V_R= 400 V; dI_F/dt = 500 A/μs;

T_j= 25 °C; per diode; Fig. 8

12 3 4 5 6 7...11

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