Datasheet > WNS30H100CB

WNS30H100CB

更新时间： 2024-01-13 03:18:43

品牌	Logo	应用领域
瑞能 - WEEN		二极管
页数	文件大小	规格书
11页	258K
描述
Dual power Schottky diode

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WNS30H100CB 技术参数

生命周期：	Active	Reach Compliance Code：	unknown
风险等级：	5.72	二极管类型：	RECTIFIER DIODE
Base Number Matches：	1

WNS30H100CB 数据手册

WNS30H100CB

Dual power Schottky diode

8 April 2018

Product data sheet

1. General description

Dual common cathode power Schottky diode designed for high frequency switched mode power

supplies in a TO-263(D2PAK) plastic package.

2. Features and benefits

•

Trench structure

•

High junction temperature up to 150°C

Low forward conduction voltage

Negligible switching losses

3. Applications

•

DC to DC converters

Freewheeling diode

OR-ing diode

Switched mode power supply rectifier

4. Quick reference data

Table 1. Quick reference data

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

V_RRM

repetitive peak reverse

voltage

100

I_F(AV)

I_O(AV)

average forward

current

δ = 0.5 ; T_mb≤ 134 °C; square-wave

pulse; per diode; Fig. 1; Fig. 2; Fig. 3

average output current δ = 0.5 ; T_mb≤ 133 °C; square-wave

pulse; both diodes conducting

Static characteristics

V_Fforward voltage

I_F= 5 A; T_j= 25 °C; Fig. 6; per diode

I_F= 5 A; T_j= 125 °C; Fig. 6; per diode

I_F= 10 A; T_j= 25 °C; Fig. 6; per diode

I_F= 10 A; T_j= 125 °C; Fig. 6; per diode

I_F= 15 A; T_j= 25 °C; Fig. 6; per diode

I_F= 15 A; T_j= 125 °C; Fig. 6; per diode

0.48

0.41

0.56

0.53

0.64

0.6

0.55

0.48

0.63

0.6

0.71

0.67

I_R

reverse current

V_R= 100 V; T_j= 25 °C; Fig. 7; Fig. 8;

per diode

µA

V_R= 100 V; T_j= 125 °C; Fig. 7; Fig. 8;

per diode

12 3 4 5 6 7...11

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