Datasheet > WCMA2008U1X

WCMA2008U1X

更新时间： 2022-11-25 19:04:43

品牌	Logo	应用领域
其他 - ETC		/
页数	文件大小	规格书
11页	279K
描述
256K x 8 Static RAM

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WCMA2008U1X 数据手册

WCMA2008U1X

Electrical Characteristics Over the Operating Range

WCMA2008U1X-70

Param-

eter

Description

Output HIGH Voltage

Output LOW Voltage

Input HIGH Voltage

Input LOW Voltage

Test Conditions

Min.

Typ.^[2]

Max.

Unit

V_OH

I_OH= –1.0 mA

I_OL= 2.1 mA

V_CC= 2.7V

2.4

V_OL

V_IH

V_IL

I_IX

0.4

2.2

–0.5

–1

V_CC+ 0.5V

0.8

Input Leakage Current GND < V_I< V_CC

Output Leakage Current GND < V_O< V_CC, Output Disabled

µA

I_OZ

I_CC

–1

V_CCOperating Supply

Current

f =f_MAX= 1/t_RC

f = 1 MHz

V_CC= 3.6V

I_OUT= 0 mA

CMOS Levels

I_SB1

Automatic CE

Power-Down Current—

TTL Inputs

Max. V_CC, CE₁>V_IH, CE₂<V_IH

V_IN> V_IHor

100

µA

V_IN< V_IL, f = f_MAX

I_SB2

Automatic CE

Power-Down Current— CE₂< 0.3V

Max. V_CC, CE₁> V_CC– 0.3V,

CMOS Inputs V_IN> V_CC– 0.3V or V_IN< 0.3V, f = 0

Capacitance^[3]

Parameter

Description

Input Capacitance

Output Capacitance

Test Conditions

Max.

Unit

C_IN

T_A= 25°C, f = 1 MHz,V_CC=Vcc_(typ)

C_OUT

Thermal Resistance

Description

Test Conditions

Symbol

BGA

Unit

Thermal Resistance^[3]

(Junction to Ambient)

Still Air, soldered on a 4.25 x 1.125 inch, 4-layer print-

ed circuit board

Θ_JA

°C/W

Thermal Resistance^[3]

(Junction to Case)

Θ_JC

°C/W

Note:

3. Tested initially and after any design or process changes that may affect these parameters.

1 234 5 6 7...11

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