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W29C020CT90N PDF预览

W29C020CT90N

更新时间: 2024-09-18 23:41:31
品牌 Logo 应用领域
其他 - ETC 内存集成电路光电二极管可编程只读存储器电动程控只读存储器电可擦编程只读存储器
页数 文件大小 规格书
22页 305K
描述
EEPROM|FLASH|256KX8|CMOS|TSSOP|32PIN|PLASTIC

W29C020CT90N 数据手册

 浏览型号W29C020CT90N的Datasheet PDF文件第2页浏览型号W29C020CT90N的Datasheet PDF文件第3页浏览型号W29C020CT90N的Datasheet PDF文件第4页浏览型号W29C020CT90N的Datasheet PDF文件第5页浏览型号W29C020CT90N的Datasheet PDF文件第6页浏览型号W29C020CT90N的Datasheet PDF文件第7页 
W29C020C  
´ 8 CMOS FLASH MEMORY  
256K  
GENERAL DESCRIPTION  
The W29C020C is a 2-megabit, 5-volt only CMOS flash memory organized as 256K ´ 8 bits. The  
device can be written (erased and programmed) in-system with a standard 5V power supply. A 12-volt  
VPP is not required. The unique cell architecture of the W29C020C results in fast write (erase/program)  
operations with extremely low current consumption compared to other comparable 5-volt flash memory  
products. The device can also be written (erased and programmed) by using standard EPROM  
programmers.  
FEATURES  
· Single 5-volt write (erase and program)  
operations  
· Software and hardware data protection  
· Low power consumption  
· Fast page-write operations  
- 128 bytes per page  
- Active current: 25 mA (typ.)  
- Standby current: 20 mA (typ.)  
- Page write (erase/program) cycle: 10 mS  
(max.)  
· Automatic write (erase/program) timing with  
internal VPP generation  
- Effective byte-write (erase/program) cycle  
time: 39 mS  
· End of write (erase/program) detection  
- Toggle bit  
- Optional software-protected data write  
· Fast chip-erase operation: 50 mS  
· Two 8 KB boot blocks with lockout  
· Whole chip cycling: 10K (typ.)  
· Read access time: 70/90/120 nS  
· Twenty-year data retention  
- Data polling  
· Latched address and data  
· All inputs and outputs directly TTL compatible  
· JEDEC standard byte-wide pinouts  
· Available packages: 32-pin 600 mil DIP, 32-pin  
TSOP, and 32-pin PLCC  
Publication Release Date: February 18, 2002  
- 1 -  
Revision A4  

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