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W29C020T-12B PDF预览

W29C020T-12B

更新时间: 2024-11-19 22:41:27
品牌 Logo 应用领域
华邦 - WINBOND 闪存存储内存集成电路光电二极管
页数 文件大小 规格书
21页 267K
描述
256K X 8 CMOS FLASH MEMORY

W29C020T-12B 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:TSOP1包装说明:TSOP1, TSSOP32,.8,20
针数:32Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8542.32.00.51
风险等级:5.88最长访问时间:120 ns
其他特性:128 BYTE PAGE WRITE; DATA RETENTION= 10 YEARS启动块:BOTTOM/TOP
命令用户界面:NO数据轮询:YES
数据保留时间-最小值:10耐久性:10000 Write/Erase Cycles
JESD-30 代码:R-PDSO-G32JESD-609代码:e0
长度:18.4 mm内存密度:2097152 bit
内存集成电路类型:FLASH内存宽度:8
功能数量:1部门数/规模:1,1,1
端子数量:32字数:262144 words
字数代码:256000工作模式:ASYNCHRONOUS
最高工作温度:70 °C最低工作温度:
组织:256KX8封装主体材料:PLASTIC/EPOXY
封装代码:TSOP1封装等效代码:TSSOP32,.8,20
封装形状:RECTANGULAR封装形式:SMALL OUTLINE, THIN PROFILE
并行/串行:PARALLEL峰值回流温度(摄氏度):NOT SPECIFIED
电源:5 V编程电压:5 V
认证状态:Not Qualified座面最大高度:1.2 mm
部门规模:8K,240K,8K最大待机电流:0.0001 A
子类别:Flash Memories最大压摆率:0.05 mA
最大供电电压 (Vsup):5.5 V最小供电电压 (Vsup):4.5 V
标称供电电压 (Vsup):5 V表面贴装:YES
技术:CMOS温度等级:COMMERCIAL
端子面层:Tin/Lead (Sn/Pb)端子形式:GULL WING
端子节距:0.5 mm端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED切换位:YES
类型:NOR TYPE宽度:8 mm
Base Number Matches:1

W29C020T-12B 数据手册

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W29C020  
256K ´ 8 CMOS FLASH MEMORY  
GENERAL DESCRIPTION  
The W29C020 is a 2-megabit, 5-volt only CMOS flash memory organized as 256K ´ 8 bits. The  
device can be written (erased and programmed) in-system with a standard 5V power supply. A 12-volt  
VPP is not required. The unique cell architecture of the W29C020 results in fast write (erase/program)  
operations with extremely low current consumption compared to other comparable 5-volt flash  
memory products. The device can also be written (erased and programmed) by using standard  
EPROM programmers.  
FEATURES  
· Single 5-volt write (erase and program)  
operations  
· Software and hardware data protection  
· Low power consumption  
· Fast page-write operations  
- 128 bytes per page  
- Active current: 25 mA (typ.)  
- Standby current: 20 mA (typ.)  
- Page write (erase/program) cycle: 10 mS  
(max.)  
· Automatic write (erase/program) timing with  
internal VPP generation  
- Effective byte-write (erase/program) cycle  
time: 39 mS  
· End of write (erase/program) detection  
- Toggle bit  
- Optional software-protected data write  
· Fast chip-erase operation: 50 mS  
· Two 8 KB boot blocks with lockout  
- Data polling  
· Latched address and data  
· All inputs and outputs directly TTL compatible  
· JEDEC standard byte-wide pinouts  
· Typical page write (erase/program) cycles:  
100/1K/10K  
· Available packages: 32-pin 600 mil DIP, 450 mil  
SOP, TSOP, and 32-pin PLCC  
· Read access time: 70/90/120 nS  
· Ten-year data retention  
Publication Release Date: February 1998  
- 1 -  
Revision A3  

W29C020T-12B 替代型号

型号 品牌 替代类型 描述 数据表
W29C020T-12 WINBOND

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W29C020CT12B WINBOND

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256K X 8 CMOS FLASH MEMORY

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