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W29C020P-70B PDF预览

W29C020P-70B

更新时间: 2024-11-19 22:41:27
品牌 Logo 应用领域
华邦 - WINBOND /
页数 文件大小 规格书
21页 267K
描述
256K X 8 CMOS FLASH MEMORY

W29C020P-70B 数据手册

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W29C020  
256K ´ 8 CMOS FLASH MEMORY  
GENERAL DESCRIPTION  
The W29C020 is a 2-megabit, 5-volt only CMOS flash memory organized as 256K ´ 8 bits. The  
device can be written (erased and programmed) in-system with a standard 5V power supply. A 12-volt  
VPP is not required. The unique cell architecture of the W29C020 results in fast write (erase/program)  
operations with extremely low current consumption compared to other comparable 5-volt flash  
memory products. The device can also be written (erased and programmed) by using standard  
EPROM programmers.  
FEATURES  
· Single 5-volt write (erase and program)  
operations  
· Software and hardware data protection  
· Low power consumption  
· Fast page-write operations  
- 128 bytes per page  
- Active current: 25 mA (typ.)  
- Standby current: 20 mA (typ.)  
- Page write (erase/program) cycle: 10 mS  
(max.)  
· Automatic write (erase/program) timing with  
internal VPP generation  
- Effective byte-write (erase/program) cycle  
time: 39 mS  
· End of write (erase/program) detection  
- Toggle bit  
- Optional software-protected data write  
· Fast chip-erase operation: 50 mS  
· Two 8 KB boot blocks with lockout  
- Data polling  
· Latched address and data  
· All inputs and outputs directly TTL compatible  
· JEDEC standard byte-wide pinouts  
· Typical page write (erase/program) cycles:  
100/1K/10K  
· Available packages: 32-pin 600 mil DIP, 450 mil  
SOP, TSOP, and 32-pin PLCC  
· Read access time: 70/90/120 nS  
· Ten-year data retention  
Publication Release Date: February 1998  
- 1 -  
Revision A3  

W29C020P-70B 替代型号

型号 品牌 替代类型 描述 数据表
W29C020P-70 WINBOND

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