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VS-30CTQ050STRRPBF

更新时间: 2024-11-30 13:15:31
品牌 Logo 应用领域
威世 - VISHAY 整流二极管局域网
页数 文件大小 规格书
7页 166K
描述
Rectifier Diode, Schottky, 1 Phase, 2 Element, 15A, 50V V(RRM), Silicon, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, TO-220, D2PAK-3

VS-30CTQ050STRRPBF 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:SFM
包装说明:HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, TO-220, D2PAK-3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.27
其他特性:FREEWHEELING DIODE, HIGH RELIABILITY应用:HIGH POWER
外壳连接:CATHODE配置:COMMON CATHODE, 2 ELEMENTS
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):0.56 VJESD-30 代码:R-PSSO-G2
湿度敏感等级:1最大非重复峰值正向电流:1000 A
元件数量:2相数:1
端子数量:2最高工作温度:150 °C
最低工作温度:-55 °C最大输出电流:15 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
认证状态:Not Qualified最大重复峰值反向电压:50 V
子类别:Rectifier Diodes表面贴装:YES
技术:SCHOTTKY端子形式:GULL WING
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

VS-30CTQ050STRRPBF 数据手册

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VS-30CTQ0...PbF Series, VS-30CTQ0...-N3 Series  
www.vishay.com  
Vishay Semiconductors  
Schottky Rectifier, 2 x 15 A  
FEATURES  
Base  
common  
cathode  
2
• 150 °C TJ operation  
• Very low forward voltage drop  
• High frequency operation  
• High  
purity,  
high  
temperature  
epoxy  
encapsulation for enhanced mechanical strength  
and moisture resistance  
Anode  
Anode  
2
Common  
cathode  
1
3
TO-220AB  
• Guard ring for enhanced ruggedness and long  
term reliability  
• Compliant to RoHS Directive 2002/95/EC  
PRODUCT SUMMARY  
• Designed and qualified according to JEDEC-JESD47  
Package  
TO-220AB  
2 x 15 A  
50 V, 60 V  
0.56 V  
• Halogen-free according to IEC 61249-2-21 definition  
(-N3 only)  
IF(AV)  
VR  
DESCRIPTION  
VF at IF  
This center tap Schottky rectifier has been optimized for  
very low forward voltage drop, with moderate leakage. The  
proprietary barrier technology allows for reliable operation  
up to 150 °C junction temperature. Typical applications are  
in switching power supplies, converters, freewheeling  
diodes, and reverse battery protection.  
I
RM max.  
45 mA at 125 °C  
150 °C  
TJ max.  
Diode variation  
EAS  
Common cathode  
13 mJ  
MAJOR RATINGS AND CHARACTERISTICS  
SYMBOL  
IF(AV)  
VRRM  
IFSM  
CHARACTERISTICS  
VALUES  
30  
UNITS  
Rectangular waveform  
A
V
50/60  
tp = 5 μs sine  
1000  
A
VF  
15 Apk, TJ = 125 °C (per leg)  
Range  
0.56  
V
TJ  
- 55 to 150  
°C  
VOLTAGE RATINGS  
VS-  
VS-  
30CTQ050-N3  
VS-  
VS-  
PARAMETER  
SYMBOL  
UNITS  
30CTQ050PbF  
30CTQ060PbF 30CTQ060-N3  
Maximum DC reverse voltage  
VR  
50  
50  
60  
60  
V
Maximum working peak reverse voltage  
VRWM  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
VALUES UNITS  
Maximum average  
forward current  
See fig. 5  
per device  
per leg  
30  
IF(AV)  
50 % duty cycle at TC = 105 °C, rectangular waveform  
15  
A
Maximum peak one cycle  
non-repetitive surge current per leg  
See fig. 7  
5 µs sine or 3 µs rect. pulse  
10 ms sine or 6 ms rect. pulse  
1000  
Following any rated load  
condition and with rated  
VRRM applied  
IFSM  
260  
Non-repetitive avalanche energy per leg  
Repetitive avalanche current per leg  
EAS  
IAR  
TJ = 25 °C, IAS = 1.50 A, L = 11.5 mH  
13  
mJ  
A
Current decaying linearly to zero in 1 μs  
Frequency limited by TJ maximum VA = 1.5 x VR typical  
1.50  
Revision: 11-Oct-11  
Document Number: 94189  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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