VS-30CTQ...PbF Series, VS-30CTQ...-N3 Series
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Vishay Semiconductors
Schottky Rectifier, 2 x 15 A
FEATURES
Base
common
cathode
2
• 175 °C TJ operation
• Low forward voltage drop
• High frequency operation
• High
purity,
high
temperature
epoxy
encapsulation for enhanced mechanical strength
and moisture resistance
Anode
Anode
2
Common
cathode
1
3
TO-220AB
• Guard ring for enhanced ruggedness and long
term reliability
• Compliant to RoHS Directive 2002/95/EC
PRODUCT SUMMARY
• Designed and qualified according to JEDEC-JESD47
Package
TO-220AB
2 x 15 A
• Halogen-free according to IEC 61249-2-21 definition
(-N3 only)
IF(AV)
VR
80 V, 100 V
0.67 V
DESCRIPTION
VF at IF
The center tap Schottky rectifier series has been optimized
for low reverse leakage at high temperature. The proprietary
barrier technology allows for reliable operation up to 175 °C
junction temperature. Typical applications are in switching
power supplies, converters, freewheeling diodes, and
reverse battery protection.
I
RM max.
7.0 mA at 125 °C
175 °C
TJ max.
Diode variation
EAS
Common cathode
7.50 mJ
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
IF(AV)
VRRM
IFSM
CHARACTERISTICS
VALUES
30
UNITS
Rectangular waveform
A
V
80/100
850
tp = 5 μs sine
A
VF
15 Apk, TJ = 125 °C (per leg)
Range
0.67
V
TJ
- 55 to 175
°C
VOLTAGE RATINGS
VS-
VS-
VS-
VS-
PARAMETER
SYMBOL
UNITS
30CTQ080PbF 30CTQ080-N3 30CTQ100PbF 30CTQ100-N3
Maximum DC reverse voltage
VR
80
80
100
100
V
Maximum working peak reverse voltage
VRWM
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES UNITS
Maximum average
forward current
See fig. 5
per device
per leg
30
IF(AV)
50 % duty cycle at TC = 129 °C, rectangular waveform
A
15
Maximum peak one cycle non-repetitive
surge current per leg
See fig. 7
5 µs sine or 3 µs rect. pulse
850
Following any rated load
condition and with rated
VRRM applied
IFSM
A
10 ms sine or 6 ms rect. pulse
275
Non-repetitive avalanche energy per leg
Repetitive avalanche current per leg
EAS
IAR
TJ = 25 °C, IAS = 0.50 A, L = 60 mH
7.50
0.50
mJ
A
Current decaying linearly to zero in 1 μs
Frequency limited by TJ maximum VA = 1.5 x VR typical
Revision: 26-Aug-11
Document Number: 94192
1
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