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VS-30CTQ080-M3 PDF预览

VS-30CTQ080-M3

更新时间: 2024-12-01 14:55:15
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
7页 160K
描述
High Performance Schottky Rectifier, 2 x 15 A

VS-30CTQ080-M3 技术参数

是否Rohs认证: 符合生命周期:Active
Reach Compliance Code:unknownECCN代码:EAR99
Factory Lead Time:26 weeks风险等级:5.61
其他特性:FREE WHEELING DIODE应用:GENERAL PURPOSE
外壳连接:CATHODE配置:COMMON CATHODE, 2 ELEMENTS
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):1.05 VJEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3最大非重复峰值正向电流:850 A
元件数量:2相数:1
端子数量:3最高工作温度:175 °C
最低工作温度:-55 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED最大重复峰值反向电压:80 V
最大反向电流:550 µA表面贴装:NO
技术:SCHOTTKY端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

VS-30CTQ080-M3 数据手册

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VS-30CTQ080-M3, VS-30CTQ100-M3  
www.vishay.com  
Vishay Semiconductors  
High Performance Schottky Rectifier, 2 x 15 A  
FEATURES  
Base  
common  
cathode  
2
• 175 °C TJ operation  
• Low forward voltage drop  
• High frequency operation  
• High purity, high temperature epoxy  
encapsulation for enhanced mechanical  
strength and moisture resistance  
1
2
Anode  
Anode  
2
Common  
cathode  
1
3
3
TO-220AB 3L  
• Guard ring for enhanced ruggedness and long term  
reliability  
• Designed and qualified according to JEDEC®-JESD 47  
PRIMARY CHARACTERISTICS  
• Material categorization: for definitions of compliance  
please see www.vishay.com/doc?99912  
IF(AV)  
2 x 15 A  
80 V, 100 V  
0.67 V  
VR  
VF at IF  
DESCRIPTION  
I
RM max.  
7.0 mA at 125 °C  
175 °C  
The center tap Schottky rectifier series has been optimized  
for low reverse leakage at high temperature. The proprietary  
barrier technology allows for reliable operation up to 175 °C  
junction temperature. Typical applications are in switching  
power supplies, converters, freewheeling diodes, and  
reverse battery protection.  
TJ max.  
EAS  
7.50 mJ  
Package  
TO-220AB 3L  
Circuit configuration  
Common cathode  
MAJOR RATINGS AND CHARACTERISTICS  
SYMBOL  
CHARACTERISTICS  
VALUES  
30  
UNITS  
IF(AV)  
VRRM  
IFSM  
VF  
Rectangular waveform  
A
V
80/100  
850  
tp = 5 μs sine  
A
15 Apk, TJ = 125 °C (per leg)  
0.67  
V
TJ  
Range  
-55 to +175  
°C  
VOLTAGE RATINGS  
PARAMETER  
SYMBOL  
VR  
VS-30CTQ080-M3  
VS-30CTQ100-M3  
UNITS  
Maximum DC reverse voltage  
Maximum working peak reverse voltage  
80  
100  
V
VRWM  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
50 % duty cycle at TC = 129 °C, rectangular waveform  
VALUES  
UNITS  
per device  
per leg  
30  
15  
Maximum average forward  
current, see fig. 5  
IF(AV)  
A
Following any rated load  
condition and with rated  
5 µs sine or 3 µs rect. pulse  
10 ms sine or 6 ms rect. pulse  
850  
Maximum peak one cycle non-repetitive  
surge current per leg, see fig. 7  
IFSM  
EAS  
IAR  
A
275  
V
RRM applied  
Non-repetitive avalanche energy per leg  
Repetitive avalanche current per leg  
TJ = 25 °C, IAS = 0.50 A, L = 60 mH  
7.50  
mJ  
A
Current decaying linearly to zero in 1 μs  
Frequency limited by TJ maximum VA = 1.5 x VR typical  
0.50  
Revision: 28-Feb-2023  
Document Number: 96277  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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