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VS-30CTQ080-1PBF

更新时间： 2024-11-08 00:54:23
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
8页 159K
描述
Center tap configuration

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VS-30CTQ080-1PBF 数据手册

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VS-30CTQ...SPbF, VS-30CTQ...-1PbF Series  
www.vishay.com  
Vishay Semiconductors  
High Performance Schottky Rectifier, 2 x 15 A  
FEATURES  
TO-263AB (D2PAK)  
TO-262AA  
• 175 °C TJ operation  
• Center tap configuration  
• Low forward voltage drop  
• High frequency operation  
Base  
common  
cathode  
Base  
common  
cathode  
• High  
purity,  
high  
temperature  
epoxy  
encapsulation for enhanced mechanical  
strength and moisture resistance  
2
2
• Guard ring for enhanced ruggedness and long term  
reliability  
• Meets MSL level 1, per J-STD-020, LF maximum peak  
of 260 °C  
2
2
1
1
3
3
Common  
cathode  
Common  
cathode  
Anode  
Anode  
Anode  
Anode  
• AEC-Q101 qualified  
• Material categorization: for definitions of compliance  
please see www.vishay.com/doc?99912  
VS-30CTQ...SPbF  
VS-30CTQ...-1PbF  
PRODUCT SUMMARY  
DESCRIPTION  
Package  
TO-263AB (D2PAK), TO-262AA  
2 x 15 A  
This center tap Schottky rectifier series has been optimized  
for low reverse leakage at high temperature. The proprietary  
barrier technology allows for reliable operation up to 175 °C  
junction temperature. Typical applications are in switching  
power supplies, converters, freewheeling diodes, and  
reverse battery protection.  
IF(AV)  
VR  
80 V to 100 V  
0.67 V  
VF at IF  
IRM  
7 mA at 125 °C  
175 °C  
TJ max.  
Diode variation  
EAS  
Common cathode  
7.5 mJ  
MAJOR RATINGS AND CHARACTERISTICS  
SYMBOL  
IF(AV)  
VRRM  
IFSM  
CHARACTERISTICS  
VALUES  
30  
UNITS  
Rectangular waveform  
A
V
80/100  
850  
tp = 5 μs sine  
A
VF  
15 Apk, TJ = 125 °C (per leg)  
Range  
0.67  
V
TJ  
-55 to 175  
°C  
VOLTAGE RATINGS  
PARAMETER  
VS-30CTQ080SPbF  
VS-30CTQ100SPbF  
SYMBOL  
UNITS  
VS-30CTQ080-1PbF VS-30CTQ100-1PbF  
Maximum DC reverse voltage  
VR  
80  
100  
V
Maximum working peak reverse voltage  
VRWM  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
VALUES UNITS  
per device  
per leg  
30  
15  
Maximum average forward  
current, see fig. 5  
IF(AV)  
50 % duty cycle at TC = 129 °C, rectangular waveform  
A
Following any rated load  
condition and with rated  
5 μs sine or 3 μs rect. pulse  
10 ms sine or 6 ms rect. pulse  
850  
Maximum peak one cycle non-repetitive  
surge current per leg, see fig. 7  
IFSM  
EAS  
IAR  
275  
VRRM applied  
Non-repetitive avalanche energy per leg  
Repetitive avalanche current per leg  
TJ = 25 °C, IAS = 0.50 A, L = 60 mH  
7.50  
0.50  
mJ  
A
Current decaying linearly to zero in 1 μs  
Frequency limited by TJ maximum VA = 1.5 x VR typical  
Revision: 08-Dec-14  
Document Number: 94193  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
12345678

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VS-30CTQ080-1PBF 替代型号

型号 品牌 替代类型 描述 数据表
STPS30M80CR STMICROELECTRONICS

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