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VS-30CTQ080-1-M3 PDF预览

VS-30CTQ080-1-M3

更新时间: 2024-11-07 14:12:03
品牌 Logo 应用领域
威世 - VISHAY 二极管
页数 文件大小 规格书
10页 251K
描述
Rectifier Diode, Schottky, 1 Phase, 2 Element, 80V V(RRM), Silicon, TO-262AA,

VS-30CTQ080-1-M3 技术参数

是否Rohs认证: 符合生命周期:Active
Reach Compliance Code:compliantECCN代码:EAR99
Factory Lead Time:26 weeks风险等级:5.71
其他特性:FREE WHEELING DIODE应用:GENERAL PURPOSE
外壳连接:CATHODE配置:COMMON CATHODE, 2 ELEMENTS
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):1.05 VJEDEC-95代码:TO-262AA
JESD-30 代码:R-PSIP-T3湿度敏感等级:1
最大非重复峰值正向电流:275 A元件数量:2
相数:1端子数量:3
最高工作温度:175 °C最低工作温度:-55 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:IN-LINE峰值回流温度(摄氏度):260
最大重复峰值反向电压:80 V最大反向电流:550 µA
表面贴装:NO技术:SCHOTTKY
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:40Base Number Matches:1

VS-30CTQ080-1-M3 数据手册

 浏览型号VS-30CTQ080-1-M3的Datasheet PDF文件第2页浏览型号VS-30CTQ080-1-M3的Datasheet PDF文件第3页浏览型号VS-30CTQ080-1-M3的Datasheet PDF文件第4页浏览型号VS-30CTQ080-1-M3的Datasheet PDF文件第5页浏览型号VS-30CTQ080-1-M3的Datasheet PDF文件第6页浏览型号VS-30CTQ080-1-M3的Datasheet PDF文件第7页 
VS-30CTQ...S-M3, VS-30CTQ...-1-M3 Series  
www.vishay.com  
Vishay Semiconductors  
High Performance Schottky Rectifier, 2 x 15 A  
FEATURES  
• 175 °C TJ operation  
• Center tap configuration  
• Low forward voltage drop  
• High frequency operation  
2
1
1
• High  
purity,  
high  
temperature  
epoxy  
3
2
encapsulation for enhanced mechanical strength and  
moisture resistance  
D2PAK (TO-263AB)  
3
TO-262AA  
Base  
common  
cathode  
Base  
common  
cathode  
• Guard ring for enhanced ruggedness and long term  
reliability  
2
2
• Meets MSL level 1, per J-STD-020, LF maximum peak  
of 245 °C  
• Designed and qualified according to JEDEC®-JESD 47  
• Material categorization: for definitions of compliance  
please see www.vishay.com/doc?99912  
2
2
1
1
3
3
Common  
cathode  
Common  
cathode  
Anode  
Anode  
Anode  
Anode  
DESCRIPTION  
VS-30CTQ...S-M3  
VS-30CTQ...-1-M3  
This center tap Schottky rectifier series has been optimized  
for low reverse leakage at high temperature. The proprietary  
barrier technology allows for reliable operation up to 175 °C  
junction temperature. Typical applications are in switching  
power supplies, converters, freewheeling diodes, and  
PRIMARY CHARACTERISTICS  
IF(AV)  
2 x 15 A  
80 V, 100 V  
0.67 V  
VR  
VF at IF  
reverse battery protection.  
IRM  
TJ max.  
7.0 mA at 125 °C  
175 °C  
EAS  
7.5 mJ  
Package  
D2PAK (TO-263AB), TO-262AA  
Circuit configuration  
Common cathode  
MAJOR RATINGS AND CHARACTERISTICS  
SYMBOL  
IF(AV)  
VRRM  
IFSM  
CHARACTERISTICS  
VALUES  
30  
UNITS  
Rectangular waveform  
A
V
80/100  
850  
tp = 5 μs sine  
A
VF  
15 Apk, TJ = 125 °C (per leg)  
Range  
0.67  
V
TJ  
-55 to +175  
°C  
VOLTAGE RATINGS  
VS-30CTQ080S-M3  
VS-30CTQ080-1-M3  
VS-30CTQ100S-M3  
VS-30CTQ100-1-M3  
PARAMETER  
SYMBOL  
UNITS  
Maximum DC reverse voltage  
VR  
80  
100  
V
Maximum working peak reverse voltage  
VRWM  
Revision: 27-Oct-17  
Document Number: 94938  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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