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VS-30BQ015-M3_15 PDF预览

VS-30BQ015-M3_15

更新时间: 2024-11-25 01:23:51
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
6页 97K
描述
Schottky Rectifier, 3.0 A

VS-30BQ015-M3_15 数据手册

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VS-30BQ015-M3  
Vishay Semiconductors  
Schottky Rectifier, 3.0 A  
FEATURES  
• Ultralow forward voltage drop  
• Guard ring for enhanced ruggedness and long  
term reliability  
Cathode  
Anode  
• Halogen-free according to IEC 61249-2-21  
definition  
• 125 °C TJ operation (VR < 5 V)  
• Optimized for OR-ing applications  
• High frequency operation  
SMC  
• High purity, high temperature epoxy encapsulation for  
enhanced mechanical strength and moisture resistance  
• Meets MSL level 1, per J-STD-020, LF maximum peak of  
260 °C  
PRODUCT SUMMARY  
Package  
SMC  
3.0 A  
15 V  
IF(AV)  
• Compliant to RoHS directive 2002/95/EC  
VR  
VF at IF  
IRM  
0.3 V  
DESCRIPTION  
50 mA at 100 °C  
125 °C  
The VS-30BQ015-M3 surface mount Schottky rectifier has  
been designed for applications requiring low forward drop  
and very small foot prints on PC boards. The proprietary  
barrier technology allows for reliable operation up to 125 °C  
junction temperature. Typical applications are in disk drives,  
switching power supplies, converters, freewheeling diodes,  
battery charging, and reverse battery protection.  
TJ max.  
Diode variation  
EAS  
Single die  
1.5 mJ  
MAJOR RATINGS AND CHARACTERISTICS  
SYMBOL  
IF(AV)  
VRRM  
IFSM  
CHARACTERISTICS  
VALUES  
3.0  
UNITS  
Rectangular waveform  
A
V
15  
tp = 5 μs sine  
1.0 Apk, TJ = 75 °C  
Range  
650  
A
VF  
0.30  
V
TJ  
- 55 to 125  
°C  
VOLTAGE RATINGS  
PARAMETER  
SYMBOL  
VS-30BQ015-M3  
UNITS  
Maximum DC reverse voltage  
Maximum working peak reverse voltage  
VR  
15  
25  
V
VRWM  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
VALUES  
UNITS  
50 % duty cycle at TL = 83 °C, rectangular waveform  
50 % duty cycle at TL = 78 °C, rectangular waveform  
3.0  
4.0  
Maximum average forward current  
IF(AV)  
A
Following any rated  
load condition and with  
rated VRRM applied  
5 μs sine or 3 μs rect. pulse  
650  
Maximum peak one cycle  
non-repetitive surge current  
IFSM  
10 ms sine or 6 ms rect. pulse  
75  
Non-repetitive avalanche energy  
Repetitive avalanche current  
EAS  
IAR  
TJ = 25 °C, IAS = 0.5 A, L = 12 mH  
1.5  
mJ  
A
Current decaying linearly to zero in 1 μs  
Frequency limited by TJ maximum VA = 1.5 x VR typical  
0.5  
Document Number: 93359  
Revision: 06-Sep-10  
For technical questions within your region, please contact one of the following:  
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
www.vishay.com  
1

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