Datasheet > VP0645ND

VP0645ND

更新时间： 2024-09-16 21:14:27

品牌	Logo	应用领域
超科 - SUPERTEX		输入元件开关晶体管
页数	文件大小	规格书
4页	30K
描述
Power Field-Effect Transistor, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

VP0645ND 技术参数

是否Rohs认证：	不符合	生命周期：	Obsolete
包装说明：	UNCASED CHIP, S-XUUC-N3	Reach Compliance Code：	unknown
风险等级：	5.92	其他特性：	HIGH INPUT IMPEDANCE
配置：	SINGLE WITH BUILT-IN DIODE	FET 技术：	METAL-OXIDE SEMICONDUCTOR
JESD-30 代码：	S-XUUC-N3	JESD-609代码：	e0
元件数量：	1	端子数量：	3
最高工作温度：	150 °C	封装主体材料：	UNSPECIFIED
封装形状：	SQUARE	封装形式：	UNCASED CHIP
峰值回流温度（摄氏度）：	NOT SPECIFIED	极性/信道类型：	P-CHANNEL
认证状态：	Not Qualified	子类别：	Other Transistors
表面贴装：	YES	端子面层：	TIN LEAD
端子形式：	NO LEAD	端子位置：	UPPER
处于峰值回流温度下的最长时间：	NOT SPECIFIED	晶体管应用：	SWITCHING
晶体管元件材料：	SILICON	Base Number Matches：	1

VP0645ND 数据手册

VP0645

VP0650

P-Channel Enhancement-Mode

Vertical DMOS FETs

Ordering Information

Order Number / Package

I_D(ON)

BV_DSS

R_DS(ON)

BV_DGS

-450V

-500V

(max)

(min)

-0.2A

TO-39

VP0645N2

—

TO-92

TO-220

Die^†

30Ω

—

VP0645ND

VP0650ND

VP0650N3

VP0650N5

†

MIL visual screening available

High Reliability Devices

Advanced DMOS Technology

See pages 5-4 and 5-5 for MILITARY STANDARD Process

Flows and Ordering Information.

These enhancement-mode (normally-off) transistors utilize a

vertical DMOS structure and Supertex’s well-proven silicon-gate

manufacturing process. This combination produces devices with

the power handling capabilities of bipolar transistors and with the

high input impedance and positive temperature coefficient inher-

ent in MOS devices. Characteristic of all MOS structures, these

devices are free from thermal runaway and thermally-induced

secondary breakdown.

Features

■ Free from secondary breakdown

■ Low power drive requirement

■ Ease of paralleling

Supertex’s vertical DMOS FETs are ideally suited to a wide range

of switching and amplifying applications where high breakdown

voltage, high input impedance, low input capacitance, and fast

switching speeds are desired.

■ Low C_ISSand fast switching speeds

■ Excellent thermal stability

■ Integral Source-Drain diode

■ High input impedance and high gain

■ Complementary N- and P-channel devices

Package Options

Applications

■ Motor controls

■ Converters

■ Amplifiers

■ Switches

■ Power supply circuits

■ Drivers (relays, hammers, solenoids, lamps, memories,

displays, bipolar transistors, etc.)

TO-220

TAB: DRAIN

Absolute Maximum Ratings

Drain-to-Source Voltage

BV_DSS

S G D

Drain-to-Gate Voltage

BV_DGS

± 20V

TO-39

Case: DRAIN

TO-92

Gate-to-Source Voltage

Operating and Storage Temperature

-55°C to +150°C

300°C

Soldering Temperature*

Note: See Package Outline section for dimensions.

* Distance of 1.6 mm from case for 10 seconds.

7-245

12 3 4

中文翻译

下载PDF

与VP0645ND相关器件

型号	品牌	获取价格	描述	数据表
VP0650	SUPERTEX	获取价格	P-Channel Enhancement-Mode Vertical DMOS FETs
VP0650N2	SUPERTEX	获取价格	Small Signal Field-Effect Transistor, 0.25A I(D), 500V, 1-Element, P-Channel, Silicon, Met
VP0650N3	SUPERTEX	获取价格	Small Signal Field-Effect Transistor, 0.1A I(D), 500V, 1-Element, P-Channel, Silicon, Meta
VP0650N3P001	SUPERTEX	获取价格	Small Signal Field-Effect Transistor, 0.1A I(D), 500V, 1-Element, P-Channel, Silicon, Meta
VP0650N3P002	SUPERTEX	获取价格	Small Signal Field-Effect Transistor, 0.1A I(D), 500V, 1-Element, P-Channel, Silicon, Meta
VP0650N3P005	SUPERTEX	获取价格	Small Signal Field-Effect Transistor, 0.1A I(D), 500V, 1-Element, P-Channel, Silicon, Meta
VP0650N3P007	SUPERTEX	获取价格	Small Signal Field-Effect Transistor, 0.1A I(D), 500V, 1-Element, P-Channel, Silicon, Meta
VP0650N3P008	SUPERTEX	获取价格	Small Signal Field-Effect Transistor, 0.1A I(D), 500V, 1-Element, P-Channel, Silicon, Meta
VP0650N3P011	SUPERTEX	获取价格	Small Signal Field-Effect Transistor, 0.1A I(D), 500V, 1-Element, P-Channel, Silicon, Meta
VP0650N3P012	SUPERTEX	获取价格	Small Signal Field-Effect Transistor, 0.1A I(D), 500V, 1-Element, P-Channel, Silicon, Meta

与VP0645ND相关文章

摩尔斯微电子在美国约书亚树国家公园测试 Wi-Fi HaLow
2024-09-18

6
贸泽上架Tallysman TW5386智能GNSS天线
2024-09-18

6
SL74HC10N：高性能三输入与非门解析
2024-09-03

88
AIC1781A 电池充电控制器深度解析
2024-09-03

79

产品中心

服务支持

精选活动

关于我们

帮助中心

VP0645ND

VP0645ND 技术参数

VP0645ND 数据手册

与VP0645ND相关器件

与VP0645ND相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

VP0645ND

VP0645ND 技术参数

VP0645ND 数据手册

与VP0645ND相关器件

与VP0645ND相关文章

您还可以找

您在本页遇到什么问题？