Datasheet > VP0650

VP0650

更新时间： 2024-09-16 03:19:15

品牌	Logo	应用领域
超科 - SUPERTEX		/
页数	文件大小	规格书
4页	62K
描述
P-Channel Enhancement-Mode Vertical DMOS FETs

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VP0650 数据手册

VP0645

VP0650

P-Channel Enhancement-Mode

Vertical DMOS FETs

Ordering Information

Order Number / Package

I_D(ON)

BV_DSS

R_DS(ON)

BV_DGS

-450V

-500V

(max)

(min)

-0.2A

TO-39

VP0645N2

—

TO-92

TO-220

Die^†

30Ω

—

VP0645ND

VP0650ND

VP0650N3

VP0650N5

†

MIL visual screening available

High Reliability Devices

Advanced DMOS Technology

See pages 5-4 and 5-5 for MILITARY STANDARD Process

Flows and Ordering Information.

These enhancement-mode (normally-off) transistors utilize a

vertical DMOS structure and Supertex’s well-proven silicon-gate

manufacturing process. This combination produces devices with

the power handling capabilities of bipolar transistors and with the

high input impedance and positive temperature coefficient inher-

ent in MOS devices. Characteristic of all MOS structures, these

devices are free from thermal runaway and thermally-induced

secondary breakdown.

Features

■

Free from secondary breakdown

Low power drive requirement

Ease of paralleling

Supertex’s vertical DMOS FETs are ideally suited to a wide range

of switching and amplifying applications where high breakdown

voltage, high input impedance, low input capacitance, and fast

switching speeds are desired.

Low C_ISSand fast switching speeds

Excellent thermal stability

Integral Source-Drain diode

High input impedance and high gain

Complementary N- and P-channel devices

Package Options

Applications

■

Motor controls

Converters

Amplifiers

Switches

Power supply circuits

Drivers (relays, hammers, solenoids, lamps, memories,

displays, bipolar transistors, etc.)

TO-220

TAB: DRAIN

Absolute Maximum Ratings

Drain-to-Source Voltage

Drain-to-Gate Voltage

Gate-to-Source Voltage

BV_DSS

BV_DGS

± 20V

S G D

TO-39

Case: DRAIN

TO-92

Operating and Storage Temperature

-55°C to +150°C

300°C

Soldering Temperature*

Note: See Package Outline section for dimensions.

* Distance of 1.6 mm from case for 10 seconds.

7-245

12 3 4

中文翻译

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与VP0650相关器件

型号	品牌	获取价格	描述	数据表
VP0650N2	SUPERTEX	获取价格	Small Signal Field-Effect Transistor, 0.25A I(D), 500V, 1-Element, P-Channel, Silicon, Met
VP0650N3	SUPERTEX	获取价格	Small Signal Field-Effect Transistor, 0.1A I(D), 500V, 1-Element, P-Channel, Silicon, Meta
VP0650N3P001	SUPERTEX	获取价格	Small Signal Field-Effect Transistor, 0.1A I(D), 500V, 1-Element, P-Channel, Silicon, Meta
VP0650N3P002	SUPERTEX	获取价格	Small Signal Field-Effect Transistor, 0.1A I(D), 500V, 1-Element, P-Channel, Silicon, Meta
VP0650N3P005	SUPERTEX	获取价格	Small Signal Field-Effect Transistor, 0.1A I(D), 500V, 1-Element, P-Channel, Silicon, Meta
VP0650N3P007	SUPERTEX	获取价格	Small Signal Field-Effect Transistor, 0.1A I(D), 500V, 1-Element, P-Channel, Silicon, Meta
VP0650N3P008	SUPERTEX	获取价格	Small Signal Field-Effect Transistor, 0.1A I(D), 500V, 1-Element, P-Channel, Silicon, Meta
VP0650N3P011	SUPERTEX	获取价格	Small Signal Field-Effect Transistor, 0.1A I(D), 500V, 1-Element, P-Channel, Silicon, Meta
VP0650N3P012	SUPERTEX	获取价格	Small Signal Field-Effect Transistor, 0.1A I(D), 500V, 1-Element, P-Channel, Silicon, Meta
VP0650N3P013	SUPERTEX	获取价格	Small Signal Field-Effect Transistor, 0.1A I(D), 500V, 1-Element, P-Channel, Silicon, Meta

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