5秒后页面跳转
VP0650N3 PDF预览

VP0650N3

更新时间: 2024-11-19 20:21:43
品牌 Logo 应用领域
超科 - SUPERTEX 输入元件开关晶体管
页数 文件大小 规格书
4页 30K
描述
Small Signal Field-Effect Transistor, 0.1A I(D), 500V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92

VP0650N3 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
包装说明:CYLINDRICAL, O-PBCY-T3Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.46
其他特性:HIGH INPUT IMPEDANCE配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:500 V最大漏极电流 (ID):0.1 A
最大漏源导通电阻:30 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
最大反馈电容 (Crss):20 pFJEDEC-95代码:TO-92
JESD-30 代码:O-PBCY-T3JESD-609代码:e0
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:CYLINDRICAL峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:P-CHANNEL最大功率耗散 (Abs):1 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:NO端子面层:Tin/Lead (Sn/Pb)
端子形式:THROUGH-HOLE端子位置:BOTTOM
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

VP0650N3 数据手册

 浏览型号VP0650N3的Datasheet PDF文件第2页浏览型号VP0650N3的Datasheet PDF文件第3页浏览型号VP0650N3的Datasheet PDF文件第4页 
VP0645  
VP0650  
P-Channel Enhancement-Mode  
Vertical DMOS FETs  
Ordering Information  
Order Number / Package  
ID(ON)  
BVDSS  
/
RDS(ON)  
BVDGS  
-450V  
-500V  
(max)  
(min)  
-0.2A  
-0.2A  
TO-39  
VP0645N2  
TO-92  
TO-220  
Die†  
30  
30Ω  
VP0645ND  
VP0650ND  
VP0650N3  
VP0650N5  
MIL visual screening available  
High Reliability Devices  
Advanced DMOS Technology  
See pages 5-4 and 5-5 for MILITARY STANDARD Process  
Flows and Ordering Information.  
These enhancement-mode (normally-off) transistors utilize a  
vertical DMOS structure and Supertex’s well-proven silicon-gate  
manufacturing process. This combination produces devices with  
the power handling capabilities of bipolar transistors and with the  
high input impedance and positive temperature coefficient inher-  
ent in MOS devices. Characteristic of all MOS structures, these  
devices are free from thermal runaway and thermally-induced  
secondary breakdown.  
Features  
Free from secondary breakdown  
Low power drive requirement  
Ease of paralleling  
9
Supertex’s vertical DMOS FETs are ideally suited to a wide range  
of switching and amplifying applications where high breakdown  
voltage, high input impedance, low input capacitance, and fast  
switching speeds are desired.  
Low CISS and fast switching speeds  
Excellent thermal stability  
Integral Source-Drain diode  
High input impedance and high gain  
Complementary N- and P-channel devices  
Package Options  
Applications  
Motor controls  
Converters  
Amplifiers  
Switches  
Power supply circuits  
Drivers (relays, hammers, solenoids, lamps, memories,  
displays, bipolar transistors, etc.)  
G
D
S
TO-220  
TAB: DRAIN  
Absolute Maximum Ratings  
Drain-to-Source Voltage  
BVDSS  
G
D
S
S G D  
Drain-to-Gate Voltage  
BVDGS  
± 20V  
TO-39  
Case: DRAIN  
TO-92  
Gate-to-Source Voltage  
Operating and Storage Temperature  
-55°C to +150°C  
300°C  
Soldering Temperature*  
Note: See Package Outline section for dimensions.  
* Distance of 1.6 mm from case for 10 seconds.  
7-245  

与VP0650N3相关器件

型号 品牌 获取价格 描述 数据表
VP0650N3P001 SUPERTEX

获取价格

Small Signal Field-Effect Transistor, 0.1A I(D), 500V, 1-Element, P-Channel, Silicon, Meta
VP0650N3P002 SUPERTEX

获取价格

Small Signal Field-Effect Transistor, 0.1A I(D), 500V, 1-Element, P-Channel, Silicon, Meta
VP0650N3P005 SUPERTEX

获取价格

Small Signal Field-Effect Transistor, 0.1A I(D), 500V, 1-Element, P-Channel, Silicon, Meta
VP0650N3P007 SUPERTEX

获取价格

Small Signal Field-Effect Transistor, 0.1A I(D), 500V, 1-Element, P-Channel, Silicon, Meta
VP0650N3P008 SUPERTEX

获取价格

Small Signal Field-Effect Transistor, 0.1A I(D), 500V, 1-Element, P-Channel, Silicon, Meta
VP0650N3P011 SUPERTEX

获取价格

Small Signal Field-Effect Transistor, 0.1A I(D), 500V, 1-Element, P-Channel, Silicon, Meta
VP0650N3P012 SUPERTEX

获取价格

Small Signal Field-Effect Transistor, 0.1A I(D), 500V, 1-Element, P-Channel, Silicon, Meta
VP0650N3P013 SUPERTEX

获取价格

Small Signal Field-Effect Transistor, 0.1A I(D), 500V, 1-Element, P-Channel, Silicon, Meta
VP0650N3P015 SUPERTEX

获取价格

Small Signal Field-Effect Transistor, 0.1A I(D), 500V, 1-Element, P-Channel, Silicon, Meta
VP0650N3P017 SUPERTEX

获取价格

Small Signal Field-Effect Transistor, 0.1A I(D), 500V, 1-Element, P-Channel, Silicon, Meta