Datasheet > VFT3060G_15

VFT3060G_15

更新时间： 2024-11-15 01:25:39

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
4页	79K
描述
Dual High-Voltage Trench MOS Barrier Schottky Rectifier

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

VFT3060G_15 数据手册

VFT3060G

Vishay General Semiconductor

www.vishay.com

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

Ultra Low V_F= 0.40 V at I_F= 5 A

FEATURES

TMBS^®

ITO-220AB

• Trench MOS Schottky technology

• Low forward voltage drop, low power losses

• High efficiency operation

• Solder bath temperature 275 °C max. 10 s,

per JESD 22-B106

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

TYPICAL APPLICATIONS

VFT3060G

For use in high frequency DC/DC converters, switching

power supplies, freewheeling diodes, OR-ing diode, and

reverse battery protection.

PIN 1

PIN 3

PIN 2

PRIMARY CHARACTERISTICS

MECHANICAL DATA

I_F(AV)

2 x 15 A

60 V

Case: ITO-220AB

Molding compound meets UL 94 V-0 flammability rating

V_RRM

Base P/N-M3

- halogen-free, RoHS-compliant, and

I_FSM

150 A

commercial grade

V_Fat I_F= 15 A

T_Jmax.

Package

0.61 V

Terminals: Matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

M3 suffix meets JESD 201 class 1A whisker test

150 °C

ITO-220AB

Polarity: As marked

Diode variation

Dual common cathode

Mounting Torque: 10 in-lbs maximum

MAXIMUM RATINGS (T_A= 25 °C unless otherwise noted)

PARAMETER

SYMBOL

VFT3060G

UNIT

Maximum repetitive peak reverse voltage

V_RRM

per device

per diode

Maximum average forward rectified current

(fig. 1)

I_F(AV)

Peak forward surge current 8.3 ms single half sine-wave

superimposed on rated load

I_FSM

150

Voltage rate of change (rated V_R)

dV/dt

V_AC

10 000

1500

V/μs

Isolation voltage from terminal to heatsink t = 1 min

Operating junction and storage temperature range

T_J, T_STG

-55 to +150

°C

Revision: 20-Aug-15

Document Number: 89257

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4

中文翻译

下载PDF

与VFT3060G_15相关器件

型号	品牌	获取价格	描述	数据表
VFT3060G-E3/4W	VISHAY	获取价格	Dual High-Voltage Trench MOS Barrier Schottky Rectifier
VFT3060G-M3/4W	VISHAY	获取价格	DIODE 15 A, 60 V, SILICON, RECTIFIER DIODE, TO-220AB, HALOGEN FREE AND ROHS COMPLIANT, PLA
VFT3060G-M3-4W	VISHAY	获取价格	Dual High-Voltage Trench MOS Barrier Schottky Rectifier
VFT3080C	VISHAY	获取价格	Dual Trench MOS Barrier Schottky Rectifier
VFT3080C_15	VISHAY	获取价格	Dual Trench MOS Barrier Schottky Rectifier
VFT3080C-E3/4W	VISHAY	获取价格	Dual Trench MOS Barrier Schottky Rectifier
VFT3080C-M3/4W	VISHAY	获取价格	DIODE 15 A, 80 V, SILICON, RECTIFIER DIODE, TO-220AB, HALOGEN FREE AND ROHS COMPLIANT, PLA
VFT3080C-M3-4W	VISHAY	获取价格	Dual Trench MOS Barrier Schottky Rectifier
VFT3080S	VISHAY	获取价格	Trench MOS Barrier Schottky Rectifier
VFT3080S-E3/4W	VISHAY	获取价格	Trench MOS Barrier Schottky Rectifier