Datasheet > VFT3045CBP_15

VFT3045CBP_15

更新时间： 2024-11-15 01:25:39

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
4页	83K
描述
Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection

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VFT3045CBP_15 数据手册

VFT3045CBP

Vishay General Semiconductor

www.vishay.com

Trench MOS Barrier Schottky Rectifier

for PV Solar Cell Bypass Protection

Ultra Low V_F= 0.30 V at I_F= 5.0 A

FEATURES

TMBS^®

ITO-220AB

• Trench MOS Schottky technology

• Low forward voltage drop, low power losses

• High efficiency operation

• Solder dip 275 °C max. 10 s, per JESD 22-B106

• T_J200 °C max. in solar bypass mode application

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

VFT3045CBP

TYPICAL APPLICATIONS

PIN 1

PIN 2

For use in solar cell junction box as a bypass diode for

protection, using DC forward current without reverse bias.

PIN 3

PRIMARY CHARACTERISTICS

MECHANICAL DATA

Case: ITO-220AB

Molding compound meets UL 94 V-0 flammability rating

I_F(AV)

2 x 15 A

V_RRM

45 V

200 A

I_FSM

Base P/N-M3

- halogen-free, RoHS-compliant, and

V_Fat I_F= 15 A

0.39 V

commercial grade

_OPmax. (AC mode)

150 °C

Terminals: Matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

M3 suffix meets JESD 201 class 1A whisker test

T_Jmax. (DC forward current)

Package

200 °C

ITO-220AB

Dual common cathode

Diode variation

Polarity: As marked

Mounting Torque: 10 in-lbs maximum

MAXIMUM RATINGS (T_A= 25 °C unless otherwise noted)

PARAMETER

SYMBOL

VFT3045CBP

UNIT

Maximum repetitive peak reverse voltage

V_RRM

per device

per diode

(1)

Maximum average forward rectified current (fig. 1)

I_F(AV)

Peak forward surge current 8.3 ms single half sine-wave

superimposed on rated load per diode

I_FSM

200

Isolation voltage from terminal to heatsink, t = 1 min

V_AC

1500

Operating junction and storage temperature range (AC mode)

T_OP, T_STG

-40 to +150

°C

Junction temperature in DC forward current

without reverse bias, t  1 h

(2)

T_J

 200

°C

Notes

(1)

With heatsink

(2)

Meets the requirements of IEC 61215 ed. 2 bypass diode thermal test

Revision: 20-Aug-15

Document Number: 89369

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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与VFT3045CBP_15相关器件

型号	品牌	获取价格	描述	数据表
VFT3045CBP-M3	VISHAY	获取价格	Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection
VFT3045CBP-M3/4W	VISHAY	获取价格	Rectifier Diode, Schottky, 1 Phase, 2 Element, 15A, 45V V(RRM), Silicon, TO-220AB, HALOGEN
VFT3045CBP-M3-4W	VISHAY	获取价格	Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection
VFT3045C-M3	VISHAY	获取价格	Trench MOS Schottky technology
VFT3045C-M3/4W	VISHAY	获取价格	DIODE 15 A, 45 V, SILICON, RECTIFIER DIODE, TO-220AB, HALOGEN FREE AND ROHS COMPLIANT, PLA
VFT3045C-M3-4W	VISHAY	获取价格	Dual Low-Voltage Trench MOS Barrier Schottky Rectifier
VFT30-50	ASI	获取价格	VHF POWER MOSFET N-Channel Enhancement Mode
VFT3060C	VISHAY	获取价格	Dual High-Voltage Trench MOS Barrier Schottky Rectifier
VFT3060C_15	VISHAY	获取价格	Dual High-Voltage Trench MOS Barrier Schottky Rectifier
VFT3060C-E3/4W	VISHAY	获取价格	Dual High-Voltage Trench MOS Barrier Schottky Rectifier

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