Datasheet > VFT3060G

VFT3060G

更新时间： 2022-09-12 11:29:41

品牌	Logo	应用领域
威世 - VISHAY		高压
页数	文件大小	规格书
4页	79K
描述
Dual High-Voltage Trench MOS Barrier Schottky Rectifier

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VFT3060G 数据手册

New Product

VFT3060G

Vishay General Semiconductor

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

Ultra Low V_F= 0.40 V at I_F= 5 A

FEATURES

TMBS^®

ITO-220AB

• Trench MOS Schottky technology

• Low forward voltage drop, low power losses

• High efficiency operation

• Solder bath temperature 275 °C max. 10 s, per

JESD 22-B106

• Compliant to RoHS Directive 2002/95/EC and in

accordance to WEEE 2002/96/EC

• Halogen-free according to IEC 61249-2-21 definition

VFT3060G

PIN 1

PIN 3

PIN 2

TYPICAL APPLICATIONS

For use in high frequency DC/DC converters, switching

power supplies, freewheeling diodes, OR-ing diode, and

reverse battery protection.

MECHANICAL DATA

Case: ITO-220AB

Molding compound meets UL 94 V-0 flammability rating

PRIMARY CHARACTERISTICS

I_F(AV)

2 x 15 A

60 V

Base P/N-M3

- halogen-free, RoHS compliant, and

V_RRM

commercial grade

I_FSM

150 A

0.61 V

150 °C

Terminals: Matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

M3 suffix meets JESD 201 class 1A whisker test

V_Fat I_F= 15 A

T_Jmax.

Polarity: As marked

Mounting Torque: 10 in-lbs maximum

MAXIMUM RATINGS (T_A= 25 °C unless otherwise noted)

PARAMETER

SYMBOL

VFT3060G

UNIT

Maximum repetitive peak reverse voltage

V_RRM

per device

per diode

Maximum average forward rectified current

(fig. 1)

I_F(AV)

Peak forward surge current 8.3 ms single half sine-wave

superimposed on rated load

I_FSM

150

Voltage rate of change (rated V_R)

dV/dt

V_AC

10 000

1500

V/μs

Isolation voltage from termal to heatsink t = 1 min

Operating junction and storage temperature range

T_J, T_STG

- 55 to + 150

°C

Document Number: 89257

Revision: 18-Nov-10

For technical questions within your region, please contact one of the following:

DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

www.vishay.com

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