Datasheet > VFT3045C

VFT3045C

更新时间： 2024-11-14 11:57:11

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
4页	74K
描述
Dual Low-Voltage Trench MOS Barrier Schottky Rectifier

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VFT3045C 数据手册

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VFT3045C

Vishay General Semiconductor

Dual Low-Voltage Trench MOS Barrier Schottky Rectifier

Ultra Low V_F= 0.30 V at I_F= 5.0 A

FEATURES

TMBS^®

ITO-220AB

• Trench MOS Schottky technology

• Low forward voltage drop, low power losses

• High efficiency operation

• Solder bath temperature 275 °C max. 10 s, per

JESD 22-B106

• Compliant to RoHS Directive 2002/95/EC and in

accordance to WEEE 2002/96/EC

• Halogen-free according to IEC 61249-2-21 definition

VFT3045C

PIN 1

PIN 3

PIN 2

TYPICAL APPLICATIONS

For use in high frequency DC/DC converters, switching

power supplies, freewheeling diodes, OR-ing diode, and

reverse battery protection.

MECHANICAL DATA

PRIMARY CHARACTERISTICS

Case: ITO-220AB

Molding compound meets UL 94 V-0 flammability rating

I_F(AV)

2 x 15 A

45 V

V_RRM

Base P/N-M3

- halogen-free, RoHS compliant, and

I_FSM

200 A

0.39 V

150 °C

commercial grade

Terminals: Matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

M3 suffix meets JESD 201 class 1A whisker test

V_Fat I_F= 15 A

T_Jmax.

Polarity: As marked

Mounting Torque: 10 in-lbs maximum

MAXIMUM RATINGS (T_A= 25 °C unless otherwise noted)

PARAMETER

SYMBOL

VFT3045C

UNIT

Maximum repetitive peak reverse voltage

V_RRM

per device

per diode

Maximum average forward rectified current

(fig. 1)

I_F(AV)

Peak forward surge current 8.3 ms single half sine-wave

superimposed on rated load

I_FSM

200

Isolation voltage from termal to heatsink t = 1 min

Operating junction and storage temperature range

V_AC

1500

T_J, T_STG

- 40 to + 150

°C

Document Number: 89355

Revision: 26-Oct-10

For technical questions within your region, please contact one of the following:

DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

www.vishay.com

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