Datasheet > VFT3045BP

VFT3045BP

更新时间： 2024-11-14 08:13:07

品牌	Logo	应用领域
威世 - VISHAY		电池
页数	文件大小	规格书
4页	84K
描述
Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection

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VFT3045BP 数据手册

VFT3045BP

Vishay General Semiconductor

www.vishay.com

Trench MOS Barrier Schottky Rectifier

for PV Solar Cell Bypass Protection

Ultra Low V_F= 0.30 V at I_F= 5 A

FEATURES

TMBS^®

ITO-220AC

• Trench MOS Schottky technology

• Low forward voltage drop, low power losses

• High efficiency operation

• Solder bath temperature 275 °C max. 10 s, per

JESD 22-B106

• Compliant to RoHS Directive 2011/65/EU

• Halogen-free according to IEC 61249-2-21 definition

VFT3045BP

TYPICAL APPLICATIONS

PIN 1

For use in solar cell junction box as a bypass diode for

protection, using DC forward current without reverse bias.

PIN 2

MECHANICAL DATA

Case: ITO-220AC

Molding compound meets UL 94 V-0 flammability rating

PRIMARY CHARACTERISTICS

Base P/N-M3

- halogen-free, RoHS compliant, and

I_F(DC)

30 A

45 V

commercial grade

V_RRM

Terminals: Matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

M3 suffix meets JESD 201 class 1A whisker test

I_FSM

200 A

0.51 V

150 °C

200 °C

V_Fat I_F= 30 A

_OPmax. (AC mode)

Polarity: As marked

T_Jmax. (DC forward current)

Mounting Torque: 10 in-lbs maximum

MAXIMUM RATINGS (T_A= 25 °C unless otherwise noted)

PARAMETER

SYMBOL

VFT3045BP

UNIT

Maximum repetitive peak reverse voltage

Maximum DC forward bypassing current (fig. 1)

V_RRM

(1)

I_F(DC)

Peak forward surge current 8.3 ms single half sine-wave

superimposed on rated load

I_FSM

200

Operating junction temperature range (AC mode)

Isolation voltage from termal to heatsink t = 1 min

T_OP

V_AC

- 40 to + 150

1500

°C

Junction temperature in DC forward current

without reverse bias, t  1 h

(2)

T_J

 200

°C

Notes

(1)

With heatsink

Meets the requirements of IEC 61215 ed. 2 bypass diode thermal test

(2)

Revision: 23-Feb-12

Document Number: 89455

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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与VFT3045BP相关器件

型号	品牌	获取价格	描述	数据表
VFT3045BP_15	VISHAY	获取价格	Trench MOS Barrier Schottky Rectifier
VFT3045BP-M3/4W	VISHAY	获取价格	Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection
VFT3045C	VISHAY	获取价格	Dual Low-Voltage Trench MOS Barrier Schottky Rectifier
VFT3045CBP	VISHAY	获取价格	Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection
VFT3045CBP_1205	VISHAY	获取价格	Trench MOS Barrier Schottky Rectifier
VFT3045CBP_15	VISHAY	获取价格	Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection
VFT3045CBP-M3	VISHAY	获取价格	Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection
VFT3045CBP-M3/4W	VISHAY	获取价格	Rectifier Diode, Schottky, 1 Phase, 2 Element, 15A, 45V V(RRM), Silicon, TO-220AB, HALOGEN
VFT3045CBP-M3-4W	VISHAY	获取价格	Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection
VFT3045C-M3	VISHAY	获取价格	Trench MOS Schottky technology

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