5秒后页面跳转
V30120S PDF预览

V30120S

更新时间: 2024-11-20 05:52:11
品牌 Logo 应用领域
威世 - VISHAY 高压
页数 文件大小 规格书
5页 137K
描述
High-Voltage Trench MOS Barrier Schottky Rectifier

V30120S 数据手册

 浏览型号V30120S的Datasheet PDF文件第2页浏览型号V30120S的Datasheet PDF文件第3页浏览型号V30120S的Datasheet PDF文件第4页浏览型号V30120S的Datasheet PDF文件第5页 
V30120S & VI30120S  
Vishay General Semiconductor  
New Product  
High-Voltage Trench MOS Barrier Schottky Rectifier  
Ultra Low V = 0.402 V at I = 5 A  
F
F
FEATURES  
• Trench MOS Schottky Technology  
• Low forward voltage drop, low power losses  
• High efficiency operation  
TO-220AB  
TO-262AA  
K
• Low thermal resistance  
• Solder Dip 260 °C, 40 seconds  
3
• Component in accordance to RoHS 2002/95/EC  
and WEEE 2002/96/EC  
3
2
2
1
1
V30120S  
VI30120S  
PIN 1  
PIN 3  
PIN 1  
PIN 3  
PIN 2  
CASE  
PIN 2  
K
TYPICAL APPLICATIONS  
For use in high frequency inverters, switching power  
supplies, free-wheeling diodes, Oring diode, dc-to-dc  
converters and reverse battery protection.  
MAJOR RATINGS AND CHARACTERISTICS  
MECHANICAL DATA  
IF(AV)  
30 A  
120 V  
300 A  
0.70 V  
150 °C  
Case: TO-220AB & TO-262AA  
Epoxy meets UL 94V-0 flammability rating  
VRRM  
IFSM  
Terminals: Matte tin plated leads, solderable per  
J-STD-002B and JESD22-B102D  
E3 suffix for commercial grade  
VF at IF = 30 A  
Tj max.  
Polarity: As marked  
Mounting Torque: 10 in-lbs maximum  
MAXIMUM RATINGS (T = 25 °C unless otherwise noted)  
A
PARAMETER  
SYMBOL  
V30120S  
VI30120S  
UNIT  
V
Maximum repetitive peak reverse voltage  
Maximum average forward rectified current (see Fig. 1)  
VRRM  
120  
30  
IF(AV)  
A
Peak forward surge current 8.3 ms single half sine-wave  
superimposed on rated load  
IFSM  
300  
A
Peak repetitive reverse current per leg at tp = 2 µs, 1 kHz  
Voltage rate of change (rated VR)  
IRRM  
dv/dt  
1.0  
A
10000  
V/µs  
°C  
Operating junction and storage temperature range  
TJ, TSTG  
- 20 to + 150  
ELECTRICAL CHARACTERISTICS (T = 25 °C unless otherwise noted)  
A
PARAMETER  
TEST CONDITIONS  
SYMBOL  
TYP.  
MAX.  
UNIT  
Breakdown voltage  
at IR = 1.0 mA Tj = 25 °C  
V(BR)  
120 (minimum)  
-
V
at IF = 5 A  
0.478  
0.648  
0.854  
-
-
I
I
F = 15 A  
F = 30 A  
Tj = 25 °C  
0.95  
Instantaneous forward voltage (1)  
VF  
V
at IF = 5 A  
0.402  
0.582  
0.698  
-
-
I
I
F = 15 A  
F = 30 A  
Tj = 125 °C  
0.75  
Document Number 88974  
27-Jul-06  
www.vishay.com  
1

与V30120S相关器件

型号 品牌 获取价格 描述 数据表
V30120S_08 VISHAY

获取价格

High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.43 V at IF = 5 A
V30120S_11 VISHAY

获取价格

High-Voltage Trench MOS Barrier Schottky Rectifier
V30120S_12 VISHAY

获取价格

High-Voltage Trench MOS Barrier Schottky Rectifier
V30120S-E3 VISHAY

获取价格

High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.43 V at IF = 5 A
V30120S-E3/45 VISHAY

获取价格

High-Voltage Trench MOS Barrier Schottky Rectifier
V30120S-E3/4W VISHAY

获取价格

High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.43 V at IF = 5 A
V30120S-E3_15 VISHAY

获取价格

High Voltage Trench MOS Barrier Schottky Rectifier
V30120S-E3-4W_13 VISHAY

获取价格

High-Voltage Trench MOS Barrier Schottky Rectifier
V30120SG VISHAY

获取价格

High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.47 V at IF = 5 A
V30120SG_10 VISHAY

获取价格

High-Voltage Trench MOS Barrier Schottky Rectifier