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V30150CHM3-4W PDF预览

V30150CHM3-4W

更新时间: 2024-11-20 12:20:35
品牌 Logo 应用领域
威世 - VISHAY 高压
页数 文件大小 规格书
5页 130K
描述
Dual High-Voltage Trench MOS Barrier Schottky Rectifier

V30150CHM3-4W 数据手册

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New Product  
V30150C, VI30150C  
Vishay General Semiconductor  
Dual High-Voltage Trench MOS Barrier Schottky Rectifier  
Ultra Low VF = 0.56 V at IF = 5 A  
FEATURES  
TMBS®  
• Trench MOS Schottky technology  
TO-220AB  
TO-262AA  
• Low forward voltage drop, low power losses  
• High efficiency operation  
K
• Solder bath temperature 275 °C max. 10 s, per  
JESD 22-B106  
• AEC-Q101 qualified  
• Compliant to RoHS Directive 2002/95/EC and in  
accordance to WEEE 2002/96/EC  
3
3
2
2
1
1
V30150C  
VI30150C  
Halogen-free according to IEC 61249-2-21 definition  
PIN 1  
PIN 1  
PIN 2  
K
PIN 2  
CASE  
PIN 3  
PIN 3  
TYPICAL APPLICATIONS  
For use in high frequency DC/DC converters, switching  
power supplies, freewheeling diodes, OR-ing diode, and  
reverse battery protection.  
PRIMARY CHARACTERISTICS  
MECHANICAL DATA  
Case: TO-220AB and TO-262AA  
Molding compound meets UL 94 V-0 flammability rating  
IF(AV)  
2 x 15 A  
150 V  
VRRM  
IFSM  
140 A  
Base P/N-M3  
- halogen-free, RoHS compliant, and  
commercial grade  
Base P/NHM3 - halogen-free, RoHS compliant, and  
AEC-Q101 qualified  
VF at IF = 15 A  
TJ max.  
0.71 V  
150 °C  
Terminals: Matte tin plated leads, solderable per  
J-STD-002 and JESD 22-B102  
M3 suffix meets JESD 201 class 1A whisker test, HM3 suffix  
meets JESD 201 class 2 whisker test  
Polarity: As marked  
Mounting Torque: 10 in-lbs maximum  
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)  
PARAMETER  
SYMBOL  
V30150C  
VI30150C  
UNIT  
Maximum repetitive peak reverse voltage  
VRRM  
150  
30  
V
per device  
per diode  
Maximum average forward rectified current  
(fig. 1)  
IF(AV)  
A
A
15  
Peak forward surge current 8.3 ms single half sine-wave  
superimposed on rated load  
IFSM  
140  
Voltage rate of change (rated VR)  
dV/dt  
10 000  
V/μs  
°C  
Operating junction and storage temperature range  
TJ, TSTG  
- 55 to + 150  
Document Number: 89249  
Revision: 23-Mar-11  
For technical questions within your region, please contact one of the following:  
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
www.vishay.com  
1
This datasheet is subject to change without notice.  
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.526 V at IF = 5 A