Datasheet > V30202C

V30202C

更新时间： 2024-11-21 14:54:07

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
6页	202K
描述
Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.54 V at IF = 5 A

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V30202C 数据手册

V30202C, VF30202C, VB30202C, VI30202C

www.vishay.com

Vishay General Semiconductor

Dual High Voltage Trench MOS Barrier Schottky Rectifier

Ultra Low V_F= 0.54 V at I_F= 5 A

FEATURES

TMBS^®

• Trench MOS Schottky technology Gen 2

TO-220AB

ITO-220AB

• Low forward voltage drop, low power losses

• High efficiency operation

• Meets MSL level 1, per J-STD-020, LF maximum

peak of 245 °C (for TO-263AB package)

• Solder bath temperature 275 °C maximum, 10 s,

per JESD 22-B106 (for TO-220AB, ITO-220AB, and

TO-262AA package)

V30202C

VF30202C

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

PIN 1

PIN 3

PIN 1

PIN 2

CASE

PIN 2

PIN 3

TYPICAL APPLICATIONS

TO-263AB

TO-262AA

For use in high frequency DC/DC converters, switching

power supplies, freewheeling diodes, OR-ing diode, and

reverse battery protection.

MECHANICAL DATA

Case: TO-220AB, ITO-220AB, TO-263AB, and TO-262AA

Molding compound meets UL 94 V-0 flammability rating

VB30202C

VI30202C

Base P/N-M3

- halogen-free, RoHS-compliant, and

PIN 1

PIN 2

PIN 1

PIN 3

PIN 2

commercial grade

HEATSINK

Terminals: matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

M3 suffix meets JESD 201 class 1A whisker testt

PRIMARY CHARACTERISTICS

I_F(AV)

2 x 15 A

200 V

Polarity: as marked

V_RRM

Mounting Torque: 10 in-lbs max.

I_FSM

V_Fat I_F= 15 A (T_A= 125 °C)

T_Jmax.

260 A

0.65 V

175 °C

TO-220AB, ITO-220AB,

TO-263AB, TO-262AA

Package

Diode variations

Common cathode

MAXIMUM RATINGS (T_A= 25 °C unless otherwise noted)

PARAMETER

SYMBOL V30202C VF30202C VB30202C VI30202C

UNIT

Maximum repetitive peak reverse voltage

V_RRM

I_F(AV)

V_DC

I_FSM

200

per device

per diode

Maximum average forward rectified current (fig. 1)

Maximum DC reverse voltage

160

Peak forward surge current 8.3 ms single half sine-wave

superimposed on rated load per diode

260

10 000

Voltage rate of change (rated V_R)

dV/dt

V_AC

V/μs

Isolation voltage (ITO-220AB only)

from terminal to heatsink, t = 1 min

1500

Operating junction and storage temperature range

T_J, T_STG

-40 to +175

°C

Revision: 14-May-2018

Document Number: 87799

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6

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