Datasheet > V30200C

V30200C

更新时间： 2024-11-20 05:52:15

品牌	Logo	应用领域
威世 - VISHAY		高压
页数	文件大小	规格书
5页	158K
描述
Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.526 V at IF = 5 A

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V30200C 数据手册

New Product

V30200C, VB30200C & VI30200C

Vishay General Semiconductor

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

Ultra Low V = 0.526 V at I = 5 A

FEATURES

• Trench MOS Schottky technology

TMBS^®

TO-220AB

• Low forward voltage drop, low power

losses

• High efficiency operation

• Low thermal resistance

• Meets MSL level 1, per J-STD-020, LF maximum

peak of 245 °C (for TO-263AB package)

V30200C

• Solder dip 260 °C, 40 s (for TO-220AB and

TO-262AA package)

PIN 1

PIN 3

PIN 2

CASE

• Component in accordance to RoHS 2002/95/EC

and WEEE 2002/96/EC

TO-263AB

TO-262AA

TYPICAL APPLICATIONS

For use in high frequency inverters, switching power

supplies, freewheeling diodes, OR-ing diode, dc-to-dc

converters and reverse battery protection.

VB30200C

VI30200C

PIN 1

PIN 2

PIN 1

PIN 2

MECHANICAL DATA

HEATSINK

PIN 3

Case: TO-220AB, TO-263AB and TO-262AA

Epoxy meets UL 94V-0 flammability rating

PRIMARY CHARACTERISTICS

Terminals: Matte tin plated leads, solderable per

J-STD-002 and JESD22-B102

E3 suffix for consumer grade, meets JESD 201 class

1A whisker test

I_F(AV)

2 x 15 A

V_RRM

200 V

250 A

I_FSM

V_Fat I_F= 15 A

T_Jmax.

0.648 V

150 °C

Polarity: As marked

Mounting Torque: 10 in-lbs maximum

MAXIMUM RATINGS (T = 25 °C unless otherwise noted)

PARAMETER

SYMBOL

V30200C

VB30200C

VI30200C

UNIT

Maximum repetitive peak reverse voltage

V_RRM

200

Maximum average forward rectified current

(Fig. 1)

per device

per diode

I_F(AV)

Peak forward surge current 10 ms single half sine-wave

superimposed on rated load per diode

I_FSM

250

Non-repetitive avalanche energy at I_AS= 2.0 A, T_J= 25 °C

Peak repetitive reverse current at t_p= 2 µs, 1 kHz per diode

Voltage rate of change (rated V_R)

E_AS

I_RRM

100

1.0

dV/dt

10 000

V/µs

°C

Operating junction and storage temperature range

T_J, T_STG

- 40 to + 150

Document Number: 89014

Revision: 31-Jul-08

For technical questions within your region, please contact one of the following:

PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com

www.vishay.com

12 3 4 5

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