Datasheet > V30120S-E3

V30120S-E3

更新时间： 2023-12-06 20:09:55

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
6页	211K
描述
High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.43 V at IF = 5 A

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V30120S-E3 数据手册

V30120S-E3, VF30120S-E3, VB30120S-E3, VI30120S-E3

www.vishay.com

Vishay General Semiconductor

High Voltage Trench MOS Barrier Schottky Rectifier

Ultra Low V_F= 0.43 V at I_F= 5 A

FEATURES

TMBS^®

TO-220AB

ITO-220AB

• Trench MOS Schottky technology

• Low forward voltage drop, low power losses

• High efficiency operation

• Meets MSL level 1, per J-STD-020,

LF maximum peak of 245 °C (for TO-263AB

package)

• Solder bath temperature 275 °C maximum, 10 s, per

JESD 22-B106 (for TO-220AB, ITO-220AB, and

TO-262AA package)

V30120S

VF30120S

PIN 1

PIN 3

PIN 1

PIN 2

CASE

PIN 2

PIN 3

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

D²PAK (TO-263AB)

TO-262AA

TYPICAL APPLICATIONS

For use in high frequency converters, switching power

supplies, freewheeling diodes, OR-ing diode, DC/DC

converters and reverse battery protection.

VB30120S

MECHANICAL DATA

Case: TO-220AB, ITO-220AB, D²PAK (TO-263AB), and

TO-262AA

VI30120S

PIN 1

PIN 3

PIN 2

HEATSINK

Molding compound meets UL 94 V-0 flammability rating

Base P/N-E3 - RoHS-compliant, commercial grade

click logo to get started

DESIGN SUPPORT TOOLS

Terminals: matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

E3 suffix meets JESD 201 class 1A whisker test

Models

Available

Polarity: as marked

PRIMARY CHARACTERISTICS

Mounting Torque: 10 in-lbs maximum

I_F(AV)

30 A

120 V

300 A

0.74 V

150 °C

V_RRM

I_FSM

V_Fat I_F= 30 A

T_Jmax.

TO-220AB, ITO-220AB,

Package

D²PAK (TO-263AB), TO-262AA

Single

Circuit configuration

MAXIMUM RATINGS (T_A= 25 °C unless otherwise noted)

PARAMETER

SYMBOL V30120S VF30120S VB30120S VI30120S UNIT

Maximum repetitive peak reverse voltage

Maximum average forward rectified current (fig. 1)

V_RRM

I_F(AV)

120

Peak forward surge current 8.3 ms single half sine-wave

superimposed on rated load per diode

I_FSM

300

Non-repetitive avalanche energy at T_J= 25 °C, L = 100 mH

Peak repetitive reverse current at t_p= 2 μs, 1 kHz, T_J= 38 °C 2 °C

Voltage rate of change (rated V_R)

E_AS

I_RRM

180

0.5

dV/dt

V_AC

10 000

1500

V/μs

Isolation voltage (ITO-220AB only) from terminal to heatsink t = 1 min

Operating junction and storage temperature range

T_J, T_STG

-40 to +150

°C

Revision: 18-Jun-2018

Document Number: 88974

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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