Datasheet > V30150C_12

V30150C_12

更新时间： 2024-11-24 08:16:23

品牌	Logo	应用领域
威世 - VISHAY		高压
页数	文件大小	规格书
5页	163K
描述
Dual High-Voltage Trench MOS Barrier Schottky Rectifier

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

V30150C_12 数据手册

New Product

V30150C, VF30150C, VB30150C & VI30150C

Vishay General Semiconductor

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

Ultra Low V = 0.56 V at I = 5 A

FEATURES

TMBS^®

• Trench MOS Schottky technology

TO-220AB

ITO-220AB

• Low forward voltage drop, low power

losses

• High efficiency operation

• Meets MSL level 1, per J-STD-020, LF

maximum peak of 245 °C (for TO-263AB package)

• Solder bath temperature 275 °C maximum, 10 s,

per JESD 22-B106 (for TO-220AB, ITO-220AB and

TO-262AA package)

V30150C

VF30150C

TO-262AA

PIN 1

PIN 3

PIN 1

PIN 3

PIN 2

CASE

• Compliant to RoHS directive 2002/95/EC and in

accordance to WEEE 2002/96/EC

TO-263AB

TYPICAL APPLICATIONS

For use in high frequency converters, switching power

supplies, freewheeling diodes, OR-ing diode, dc-to-dc

converters and reverse battery protection.

MECHANICAL DATA

VB30150C

VI30150C

Case: TO-220AB, ITO-220AB, TO-263AB and

TO-262AA

PIN 1

PIN 3

PIN 1

PIN 2

HEATSINK

Molding compound meets UL 94 V-0 flammability

rating

Base P/N-E3 - RoHS compliant, commercial grade

PRIMARY CHARACTERISTICS

I_F(AV)

2 x 15 A

Terminals: Matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

E3 suffix meets JESD 201 class 1A whisker test

Polarity: As marked

Mounting Torque: 10 in-lbs maximum

V_RRM

150 V

140 A

0.71 V

150 °C

I_FSM

V_Fat I_F= 15 A

T_Jmax.

MAXIMUM RATINGS (T = 25 °C unless otherwise noted)

PARAMETER

SYMBOL V30150C

VF30150C VB30150C VI30150C

UNIT

Maximum repetitive peak reverse voltage

V_RRM

150

Maximum average forward rectified current

(fig. 1)

per device

per diode

I_F(AV)

I_FSM

E_AS

Peak forward surge current 8.3 ms single half sine-wave

superimposed on rated load per diode

140

110

Non-repetitive avalanche energy

at T_J= 25 °C, L = 60 mH per diode

Peak repetitive reverse current at t_p= 2 µs, 1 kHz,

T_J= 38 °C 2 °C per diode

I_RRM

dV/dt

0.5

10 000

V/µs

Voltage rate of change (rated V_R)

Isolation voltage (ITO-220AB only)

from terminal to heatsink t = 1 min

V_AC

1500

Operating junction and storage temperature range

T_J, T_STG

- 55 to + 150

°C

Document Number: 89047

Revision: 24-Jun-09

For technical questions within your region, please contact one of the following:

PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com

www.vishay.com

12 3 4 5

中文翻译

下载PDF

与V30150C_12相关器件

型号	品牌	获取价格	描述	数据表
V30150C_1205	VISHAY	获取价格	Dual High-Voltage Trench MOS Barrier Schottky Rectifier
V30150C-E3/4W	VISHAY	获取价格	Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.56 V at IF = 5 A
V30150CHM3/4W	VISHAY	获取价格	DIODE 15 A, 150 V, SILICON, RECTIFIER DIODE, TO-220AB, HALOGEN FREE AND ROHS COMPLIANT, PL
V30150CHM3-4W	VISHAY	获取价格	Dual High-Voltage Trench MOS Barrier Schottky Rectifier
V30150C-M3-4W	VISHAY	获取价格	Dual High-Voltage Trench MOS Barrier Schottky Rectifier
V301DHB34	LITTELFUSE	获取价格	Varistor Products - High Energy Industrial
V301-FREQ	CONNOR-WINFIELD	获取价格	LVPECL Output Clock Oscillator, 65MHz Min, 200MHz Max, ROHS COMPLIANT, HERMETIC SEALED, CE
V301HA32	LITTELFUSE	获取价格	Varistor Products - High Energy Industrial
V301HA40	LITTELFUSE	获取价格	Varistor Products - High Energy Industrial
V301HB34	LITTELFUSE	获取价格	Varistor, 410V, 430J, Chassis Mount, HALOGEN FREE AND ROHS COMPLIANT

与V30150C_12相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

38
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

30
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

58
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

54

产品中心

服务支持

精选活动

关于我们

帮助中心

V30150C_12

V30150C_12 数据手册

与V30150C_12相关器件

与V30150C_12相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

V30150C_12

V30150C_12 数据手册

与V30150C_12相关器件

与V30150C_12相关文章

您还可以找

您在本页遇到什么问题？