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V30150CHM3/4W PDF预览

V30150CHM3/4W

更新时间: 2024-11-20 20:00:19
品牌 Logo 应用领域
威世 - VISHAY 局域网功效瞄准线二极管
页数 文件大小 规格书
5页 142K
描述
DIODE 15 A, 150 V, SILICON, RECTIFIER DIODE, TO-220AB, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC PACKAGE-3, Rectifier Diode

V30150CHM3/4W 技术参数

生命周期:Obsolete零件包装代码:TO-220AB
包装说明:R-PSFM-T3针数:3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.61
其他特性:FREE WHEELING DIODE, LOW POWER LOSS应用:EFFICIENCY
外壳连接:CATHODE配置:COMMON CATHODE, 2 ELEMENTS
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):0.79 VJEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3最大非重复峰值正向电流:140 A
元件数量:2相数:1
端子数量:3最高工作温度:150 °C
最低工作温度:-55 °C最大输出电流:15 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
认证状态:Not Qualified最大重复峰值反向电压:150 V
子类别:Rectifier Diodes表面贴装:NO
技术:SCHOTTKY端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

V30150CHM3/4W 数据手册

 浏览型号V30150CHM3/4W的Datasheet PDF文件第2页浏览型号V30150CHM3/4W的Datasheet PDF文件第3页浏览型号V30150CHM3/4W的Datasheet PDF文件第4页浏览型号V30150CHM3/4W的Datasheet PDF文件第5页 
V30150C, VI30150C  
Vishay General Semiconductor  
www.vishay.com  
Dual High-Voltage Trench MOS Barrier Schottky Rectifier  
Ultra Low VF = 0.56 V at IF = 5 A  
FEATURES  
TMBS®  
• Trench MOS Schottky technology  
TO-220AB  
TO-262AA  
• Low forward voltage drop, low power losses  
• High efficiency operation  
K
• Solder bath temperature 275 °C max. 10 s,  
per JESD 22-B106  
• Material categorization: for definitions of compliance  
please see www.vishay.com/doc?99912  
3
3
2
2
1
1
TYPICAL APPLICATIONS  
V30150C  
VI30150C  
For use in high frequency DC/DC converters, switching  
power supplies, freewheeling diodes, OR-ing diode, and  
reverse battery protection.  
PIN 1  
PIN 1  
PIN 2  
K
PIN 2  
CASE  
PIN 3  
PIN 3  
MECHANICAL DATA  
Case: TO-220AB and TO-262AA  
Molding compound meets UL 94 V-0 flammability rating  
PRIMARY CHARACTERISTICS  
IF(AV)  
2 x 15 A  
150 V  
VRRM  
Base P/N-M3  
- halogen-free, RoHS-compliant, and  
commercial grade  
IFSM  
140 A  
Terminals: matte tin plated leads, solderable per  
J-STD-002 and JESD 22-B102  
M3 suffix meets JESD 201 class 1A whisker test,  
VF at IF = 15 A  
TJ max.  
0.71 V  
150 °C  
Package  
TO-220AB, TO-262AA  
Common cathode  
Polarity: as marked  
Diode variation  
Mounting Torque: 10 in-lbs maximum  
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)  
PARAMETER  
SYMBOL  
V30150C  
VI30150C  
UNIT  
Maximum repetitive peak reverse voltage  
VRRM  
150  
30  
V
per device  
per diode  
Maximum average forward rectified current  
(fig. 1)  
IF(AV)  
IFSM  
A
A
15  
Peak forward surge current 8.3 ms single half sine-wave  
superimposed on rated load  
140  
Voltage rate of change (rated VR)  
dV/dt  
10 000  
V/μs  
°C  
Operating junction and storage temperature range  
TJ, TSTG  
-55 to +150  
Revision: 09-Nov-17  
Document Number: 89249  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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