Datasheet > V30120S_12

V30120S_12

更新时间： 2024-11-20 08:16:23

品牌	Logo	应用领域
威世 - VISHAY		高压
页数	文件大小	规格书
5页	162K
描述
High-Voltage Trench MOS Barrier Schottky Rectifier

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V30120S_12 数据手册

New Product

V30120S, VF30120S, VB30120S & VI30120S

Vishay General Semiconductor

High-Voltage Trench MOS Barrier Schottky Rectifier

Ultra Low V = 0.43 V at I = 5 A

FEATURES

• Trench MOS Schottky technology

TMBS^®

TO-220AB

ITO-220AB

• Low forward voltage drop, low power

losses

• High efficiency operation

• Meets MSL level 1, per J-STD-020, LF

maximum peak of 245 °C (for TO-263AB package)

• Solder bath temperature 275 °C maximum, 10 s,

per JESD 22-B106 (for TO-220AB, ITO-220AB,

and TO-262AA package)

V30120S

VF30120S

PIN 1

PIN 3

PIN 1

PIN 2

CASE

PIN 2

• Compliant to RoHS directive 2002/95/EC and in

accordance to WEEE 2002/96/EC

PIN 3

TO-263AB

TO-262AA

TYPICAL APPLICATIONS

For use in high frequency converters, switching power

supplies, freewheeling diodes, OR-ing diode, dc-to-dc

converters and reverse battery protection.

VB30120S

MECHANICAL DATA

VI30120S

Case: TO-220AB, ITO-220AB, TO-263AB and

TO-262AA

PIN 1

PIN 3

PIN 2

HEATSINK

Molding compound meets UL 94 V-0 flammability

rating

Base P/N-E3 - RoHS compliant, commercial grade

PRIMARY CHARACTERISTICS

I_F(AV)

V_RRM

I_FSM

30 A

120 V

300 A

Terminals: Matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

E3 suffix meets JESD 201 class 1A whisker test

Polarity: As marked

Mounting Torque: 10 in-lbs maximum

V_Fat I_F= 30 A

T_Jmax.

0.74 V

150 °C

MAXIMUM RATINGS (T = 25 °C unless otherwise noted)

PARAMETER

SYMBOL

V30120S

VF30120S

VB30120S

VI30120S

UNIT

Maximum repetitive peak reverse voltage

Maximum average forward rectified current (fig. 1)

V_RRM

120

I_F(AV)

Peak forward surge current 8.3 ms single half sine-wave

superimposed on rated load per diode

I_FSM

E_AS

300

180

0.5

Non-repetitive avalanche energy

at T_J= 25 °C, L = 100 mH

Peak repetitive reverse current

at t_p= 2 µs, 1 kHz, T_J= 38 °C 2 °C

I_RRM

dV/dt

V/µs

Voltage rate of change (rated V_R)

10 000

1500

Isolation voltage (ITO-220AB only)

from terminal to heatsink t = 1 min

V_AC

Operating junction and storage temperature range

T_J, T_STG

- 40 to + 150

°C

Document Number: 88974

Revision: 24-Jun-09

For technical questions within your region, please contact one of the following:

PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com

www.vishay.com

12 3 4 5

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与V30120S_12相关器件

型号	品牌	获取价格	描述	数据表
V30120S-E3	VISHAY	获取价格	High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.43 V at IF = 5 A
V30120S-E3/45	VISHAY	获取价格	High-Voltage Trench MOS Barrier Schottky Rectifier
V30120S-E3/4W	VISHAY	获取价格	High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.43 V at IF = 5 A
V30120S-E3_15	VISHAY	获取价格	High Voltage Trench MOS Barrier Schottky Rectifier
V30120S-E3-4W_13	VISHAY	获取价格	High-Voltage Trench MOS Barrier Schottky Rectifier
V30120SG	VISHAY	获取价格	High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.47 V at IF = 5 A
V30120SG_10	VISHAY	获取价格	High-Voltage Trench MOS Barrier Schottky Rectifier
V30120SG-E3	VISHAY	获取价格	High Voltage Trench MOS Barrier Schottky Rectifier
V30120SG-E3/4W	VISHAY	获取价格	High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.47 V at IF = 5 A
V30120SG-E3-4W	VISHAY	获取价格	High-Voltage Trench MOS Barrier Schottky Rectifier

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