Datasheet > V12P10

V12P10

更新时间： 2024-11-29 06:02:55

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
5页	111K
描述
High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier

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V12P10 数据手册

New Product

V12P10

Vishay General Semiconductor

High Current Density Surface Mount

Trench MOS Barrier Schottky Rectifier

Ultra Low V = 0.43 V at I = 5 A

FEATURES

TMBS^®eSMP^TMSeries

• Very low profile - typical height of 1.1 mm

• Ideal for automated placement

• Trench MOS Schottky technology

• Low forward voltage drop, low power

losses

• High efficiency operation

• Meets MSL level 1, per J-STD-020, LF maximum

peak of 260 °C

TO-277A (SMPC)

• Component in accordance to RoHS 2002/95/EC

and WEEE 2002/96/EC

Anode 1

Anode 2

Cathode

• Halogen-free

MECHANICAL DATA

Case: TO-277A (SMPC)

PRIMARY CHARACTERISTICS

I_F(AV)

V_RRM

I_FSM

12 A

100 V

200 A

Molding compound meets UL 94V-0 flammability

rating.

Base P/N-E3 - RoHS compliant, commercial grade

Base P/NHE3 - RoHS compliant, high reliability/

automotive grade (AEC-Q101 qualified)

Base P/N-M3 - halogen-free and RoHS compliant,

commercial grade

E_AS

100 mJ

0.58 V

150 °C

V_Fat I_F= 12 A

T_Jmax.

Base P/NHM3 - halogen-free and RoHS compliant,

high reliability/automotive grade (AEC-Q101 qualified)

Terminals: Matte tin plated leads, solderable per

J-STD-002 and JESD22-B102

E3 and M3 suffix meets JESD 201 class 1A whisker

test, HE3 and HM3 suffix meets JESD 201 class 2

whisker test

TYPICAL APPLICATIONS

For use in low voltage high frequency inverters,

freewheeling, dc-to-dc converters and polarity

protection applications.

MAXIMUM RATINGS (T = 25 °C unless otherwise noted)

PARAMETER

SYMBOL

V12P10

V1210

100

UNIT

Device marking code

Maximum repetitive peak reverse voltage

Maximum average forward rectified current (Fig. 1)

V_RRM

I_F(AV)

Peak forward surge current 10 ms single half sine-wave

superimposed on rated load

I_FSM

200

Non-repetitive avalanche energy

at I_AS= 2.0 A, T_J= 25 °C

E_AS

_J,T_STG

100

°C

Operating junction and storage temperature range

- 40 to + 150

Document Number: 88981

Revision: 30-Jul-08

For technical questions within your region, please contact one of the following:

PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com

www.vishay.com

12 3 4 5

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与V12P10相关器件

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V12P10_11	VISHAY	获取价格	High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier
V12P10_15	VISHAY	获取价格	High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier
V12P103	VISHAY	获取价格	High Current Density Surface-Mount TMBS? (Trench MOS Barrier Schottky) Rectifier Ultra Low
V12P1086A	VISHAY	获取价格	High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier
V12P10-86A	VISHAY	获取价格	High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier
V12P1087A	VISHAY	获取价格	High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier
V12P10-87A	VISHAY	获取价格	High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier
V12P10-E3/86A	VISHAY	获取价格	High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier
V12P10-E3/87A	VISHAY	获取价格	High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier
V12P10-G3/86A	VISHAY	获取价格	DIODE 12 A, 100 V, SILICON, RECTIFIER DIODE, TO-277A, GREEN, PLASTIC, SMPC, 3 PIN, Rectifi

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