Datasheet > V12P103

V12P103

更新时间： 2023-12-06 20:10:08

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
5页	90K
描述
High Current Density Surface-Mount TMBS? (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.41 V at IF = 6 A

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V12P103 数据手册

V12P103

Vishay General Semiconductor

www.vishay.com

High Current Density Surface-Mount

TMBS^®(Trench MOS Barrier Schottky) Rectifier

Ultra Low V_F= 0.41 V at I_F= 6 A

FEATURES

• Very low profile - typical height of 1.1 mm

eSMP Series

Available

• Ideal for automated placement

• Trench MOS Schottky technology

• Low forward voltage drop, low power losses

• High efficiency operation

• Meets MSL level 1, per J-STD-020,

LF maximum peak of 260 °C

SMPC (TO-277A)

• AEC-Q101 qualified available

- Automotive ordering code; base P/NHM3

Anode 1

Anode 2

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

Cathode

LINKS TO ADDITIONAL RESOURCES

TYPICAL APPLICATIONS

For use in low voltage high frequency inverters,

freewheeling, DC/DC converters, and polarity protection

applications.

3D Models

MECHANICAL DATA

PRIMARY CHARACTERISTICS

Case: SMPC (TO-277A)

Molding compound meets UL 94 V-0 flammability rating

I_F(AV)

12 A

100 V

200 A

0.52 V

150 °C

V_RRM

Base P/N-M3

commercial grade

Base P/NHM3

halogen-free, RoHS-compliant, and

halogen-free, RoHS-compliant and

I_FSM

V_Fat I_F= 12 A (125 °C)

T_Jmax.

AEC-Q101 qualified

Terminals: matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

M3 and HM3 suffix meets JESD 201 class 2 whisker test

Package

SMPC (TO-277A)

Single

Circuit configuration

MAXIMUM RATINGS (T_A= 25 °C unless otherwise noted)

PARAMETER

SYMBOL

V12P103

V1213

100

UNIT

Device marking code

Maximum repetitive peak reverse voltage

V_RRM

(1)

I_F(AV)

Maximum DC forward current

(2)

I_F(AV)

4.2

Peak forward surge current 10 ms single half sine-wave

superimposed on rated load

I_FSM

200

(3)

Operating junction temperature range

Storage temperature range

T_J

-40 to +150

-55 to +150

°C

T_STG

Notes

(1)

(2)

(3)

Mounted on 30 mm x 30 mm pad areas aluminum PCB

Free air, mounted on recommended pad area

The heat generated must be less than the thermal conductivity from junction to ambient: dP_D/dT_J< 1/R_θJA

Revision: 14-Dec-2022

Document Number: 98456

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5

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与V12P103相关器件

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V12P1086A	VISHAY	获取价格	High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier
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V12P1087A	VISHAY	获取价格	High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier
V12P10-87A	VISHAY	获取价格	High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier
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V12P10-G3/87A	VISHAY	获取价格	DIODE 12 A, 100 V, SILICON, RECTIFIER DIODE, TO-277A, GREEN, PLASTIC, SMPC, 3 PIN, Rectifi
V12P10HE3/86A	VISHAY	获取价格	High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier
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