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UZDM4206N PDF预览

UZDM4206N

更新时间: 2024-11-24 21:14:51
品牌 Logo 应用领域
美台 - DIODES 开关光电二极管晶体管
页数 文件大小 规格书
4页 149K
描述
Small Signal Field-Effect Transistor, 1A I(D), 60V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SM-8, 8 PIN

UZDM4206N 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:SMALL OUTLINE, R-PDSO-G8针数:8
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.32配置:SEPARATE, 2 ELEMENTS
最小漏源击穿电压:60 V最大漏极电流 (ID):1 A
最大漏源导通电阻:1 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
最大反馈电容 (Crss):20 pFJESD-30 代码:R-PDSO-G8
JESD-609代码:e3湿度敏感等级:1
元件数量:2端子数量:8
工作模式:ENHANCEMENT MODE封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:N-CHANNEL
认证状态:Not Qualified表面贴装:YES
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:40
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

UZDM4206N 数据手册

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