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UZDT1048TA PDF预览

UZDT1048TA

更新时间: 2024-11-06 20:08:27
品牌 Logo 应用领域
美台 - DIODES 开关光电二极管晶体管
页数 文件大小 规格书
6页 335K
描述
Power Bipolar Transistor, 5A I(C), 17.5V V(BR)CEO, 2-Element, NPN, Silicon, Plastic/Epoxy, 8 Pin, SM-8, 8 PIN

UZDT1048TA 技术参数

生命周期:Obsolete包装说明:SMALL OUTLINE, R-PDSO-G8
针数:8Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.38
最大集电极电流 (IC):5 A集电极-发射极最大电压:17.5 V
配置:SEPARATE, 2 ELEMENTS最小直流电流增益 (hFE):50
JESD-30 代码:R-PDSO-G8JESD-609代码:e3
湿度敏感等级:1元件数量:2
端子数量:8封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:NPN
认证状态:Not Qualified表面贴装:YES
端子面层:MATTE TIN端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:40
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):150 MHzBase Number Matches:1

UZDT1048TA 数据手册

 浏览型号UZDT1048TA的Datasheet PDF文件第2页浏览型号UZDT1048TA的Datasheet PDF文件第3页浏览型号UZDT1048TA的Datasheet PDF文件第4页浏览型号UZDT1048TA的Datasheet PDF文件第5页浏览型号UZDT1048TA的Datasheet PDF文件第6页 
ZDT1048  
SM-8 Dual NPN medium power high gain transistors  
Summary  
BV  
> 17.5V  
CEO  
I
= 5A  
C(cont)  
V
< 75mV @ 1A  
CE(sat)  
P = 2.75W  
D
Description  
C1  
E1  
C2  
E2  
Advanced process capability has been used to achieve  
this high performance device. Combining two NPN  
transistors in the SM-8 package provides a compact  
solution for the intended applications.  
B1  
B2  
Features  
Dual NPN device  
Very low saturation voltage  
High gain  
SM 8 package  
Applications  
CCFL invertors  
Royer circuits  
Ordering information  
DEVICE  
Reel size  
(inches)  
Tape width  
(mm)  
Quantity  
per reel  
ZDT1048TA  
7
12  
1000  
Device marking  
T1048  
Issue 2 - December 2007  
© Zetex Semiconductors plc 2007  
1
www.zetex.com  

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